MT53E1G64D4HJ-046 AUT:C TR

The MT53E1G64D4HJ-046 AUT:C TR is a 64 Gbit volatile DRAM organized as 1G x 64 using mobile LPDDR4X SDRAM architecture. It delivers high-speed memory access in a compact 556 WFBGA package for designs that require dense, low-voltage system memory.

Designed and qualified for automotive use, this device targets applications that need high throughput, compact integration, and operation across extended temperature ranges.

Key Features

• Memory Core 64 Gbit capacity organized as 1G × 64 using mobile LPDDR4X SDRAM technology.
• Performance Supports a clock frequency of 2.133 GHz with an access time of 3.5 ns and a write cycle time (word page) of 18 ns for low-latency operation.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to support reduced power consumption in mobile and embedded systems.
• Interface Parallel memory interface suitable for high-bandwidth system integration.
• Package 556-TFBGA / 556-WFBGA supplier device package with a 12.4 × 12.4 mm footprint for dense board-level integration.
• Temperature & Qualification Automotive-grade device with AEC-Q100 qualification and an operating temperature range of −40°C to 125°C (TC) for high-reliability environments.

Typical Applications

• Automotive systems — Memory for vehicle electronic control units and infotainment where AEC-Q100 qualification and extended temperature range are required.
• Mobile devices — High-density mobile LPDDR4X memory for compact, low-voltage platform designs.
• Embedded systems — Volatile high-speed memory for embedded controllers and compute modules that require parallel memory interfaces.

Unique Advantages

• High-density memory: 64 Gbit capacity (1G × 64) enables large memory footprints in a single device, simplifying board-level BOM.
• High-speed operation: 2.133 GHz clock and 3.5 ns access time support demanding bandwidth and latency requirements.
• Automotive-grade qualification: AEC-Q100 qualification and −40°C to 125°C operating range provide suitability for automotive and other demanding environments.
• Low-voltage operation: 1.06 V–1.17 V supply reduces system power draw compared with higher-voltage memories.
• Compact package: 556 WFBGA (12.4 × 12.4 mm) enables dense integration in space-constrained designs.
• Parallel interface: Parallel memory interface simplifies integration with compatible system controllers and data paths.

Why Choose MT53E1G64D4HJ-046 AUT:C TR?

The MT53E1G64D4HJ-046 AUT:C TR combines high-density LPDDR4X architecture with automotive-grade qualification and a compact 556 WFBGA package to deliver a balance of performance, low-voltage efficiency, and environmental robustness. It is suited to designers seeking a verified, high-throughput volatile memory solution for automotive, mobile, and embedded platforms.

This device supports designs that require scalability of memory capacity, reliable operation across extended temperature ranges, and integration into compact board layouts while maintaining low supply voltage requirements.

Request a quote or contact sales to discuss pricing, availability, and lead times for the MT53E1G64D4HJ-046 AUT:C TR.