MT53E1G64D4HJ-046 WT:C TR

The MT53E1G64D4HJ-046 WT:C TR is a 64 Gbit DRAM device implementing Mobile LPDDR4X SDRAM architecture. It delivers high-density, parallel memory organized as 1G x 64 for systems that require compact, high-speed volatile memory.

Designed for mobile and embedded systems, this device combines a 2.133 GHz clock capability and low-voltage operation (1.06 V–1.17 V) to balance performance and power efficiency in space-constrained packages.

Key Features

• Core / Technology Mobile LPDDR4X SDRAM architecture providing modern low-power SDRAM functionality.
• Memory Organization & Size 1G x 64 organization delivering a total memory capacity of 64 Gbit.
• Performance Up to 2.133 GHz clock frequency with an access time of 3.5 ns and a write cycle time (word/page) of 18 ns, supporting high-speed memory transactions.
• Power Low-voltage operation from 1.06 V to 1.17 V to help reduce overall system power consumption.
• Interface Parallel memory interface suitable for designs that require wide data paths and predictable timing.
• Package 556-WFBGA / 556-TFBGA package (12.4 × 12.4 mm) providing a compact footprint for board-level integration.
• Operating Temperature Specified operating range of −30 °C to 85 °C (TC) for deployment across a range of thermal environments.

Typical Applications

• Mobile Devices Serves as on-module LPDDR4X memory for handheld and battery-powered platforms that need high-density, low-voltage RAM.
• Embedded Systems Used in compact embedded designs that require fast volatile memory in a small 556-WFBGA package.
• High‑Performance Memory Subsystems Suitable for systems that require a wide (1G x 64) parallel data path and high clock rates for rapid data transfer.

Unique Advantages

• High Density (64 Gbit): Enables greater memory capacity in a single device for complex application workloads.
• High Clock Rate: 2.133 GHz clock frequency supports fast memory access and throughput when paired with compatible controllers.
• Low-Voltage Operation: 1.06 V–1.17 V supply range reduces power consumption compared with higher-voltage alternatives.
• Compact Packaging: 556-WFBGA (12.4 × 12.4 mm) footprint minimizes PCB area for space-constrained designs.
• Wide Operating Range: −30 °C to 85 °C (TC) for deployment across a variety of thermal conditions.
• Predictable Timing: 3.5 ns access time and 18 ns write cycle time (word/page) aid deterministic memory performance planning.

Why Choose IC DRAM 64GBIT PAR 556WFBGA?

The MT53E1G64D4HJ-046 WT:C TR positions itself as a high-density LPDDR4X memory device for designers needing low-voltage, high-speed DRAM in a compact 556-WFBGA package. Its 1G x 64 organization and 2.133 GHz clock capability make it suitable for designs where capacity and throughput matter while conserving board area and power.

Built by Micron Technology Inc., this component is appropriate for development teams targeting mobile and embedded platforms that require scalable, robust volatile memory with defined electrical and timing characteristics.

Request a quote or submit an inquiry to receive pricing and availability details for the MT53E1G64D4HJ-046 WT:C TR.