MT53E1G64D4NZ-046 WT:C

The MT53E1G64D4NZ-046 WT:C is a 64 Gbit volatile DRAM device implemented in the Mobile LPDDR4X SDRAM architecture. It is organized as 1G x 64 and delivers mobile-class memory performance in a 376-WFBGA (14×14) package.

This device targets designs that require high-frequency, low-voltage parallel DRAM for compact systems, providing a balance of throughput, energy efficiency, and small form-factor integration.

Key Features

• Technology & Memory Format Mobile LPDDR4X SDRAM in DRAM format; volatile memory suitable for high-speed system memory applications.
• Density & Organization 64 Gbit capacity organized as 1G × 64, enabling wide data paths for parallel access.
• Clock & Performance 2.133 GHz clock frequency with a 3.5 ns access time and an 18 ns write cycle time (word page), delivering predictable timing for high-throughput designs.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V, appropriate for power-sensitive mobile and compact applications.
• Interface Parallel memory interface consistent with the device’s 1G × 64 organization and LPDDR4X architecture.
• Package & Mounting 376-WFBGA package (14×14 mm) for compact board-level integration.
• Operating Temperature Specified operating range of -25°C to 85°C (TC) for extended environmental tolerance.

Typical Applications

• Mobile Devices — Low-voltage LPDDR4X operation and high clock frequency suit high-throughput memory needs in compact handheld designs.
• Embedded Computing — 64 Gbit density and parallel interface provide system memory capacity for embedded platforms requiring fast access and compact packaging.
• Consumer Electronics — Small 376-WFBGA footprint and mobile-class power consumption support integration into space-constrained consumer products.

Unique Advantages

• High-frequency operation: 2.133 GHz clock rate and 3.5 ns access time support demanding bandwidth requirements.
• Large parallel capacity: 64 Gbit organized as 1G × 64 provides wide data paths for efficient parallel transfers.
• Low-voltage efficiency: 1.06 V–1.17 V supply reduces power draw in energy-sensitive designs.
• Compact package: 376-WFBGA (14×14) enables dense board layouts and small form-factor integration.
• Predictable timing: Documented write cycle time (18 ns) and access time (3.5 ns) help with deterministic memory subsystem design.
• Extended operating range: -25°C to 85°C rating supports a broad range of environmental conditions.

Why Choose IC DRAM 64GBIT PAR 376WFBGA?

MT53E1G64D4NZ-046 WT:C positions itself as a mobile LPDDR4X DRAM option for designs that require high-throughput, low-voltage memory in a compact package. Its combination of 64 Gbit density, 2.133 GHz clocking, and a 376-WFBGA footprint makes it suitable for engineers balancing performance and board space constraints.

This device is appropriate for designers of mobile and embedded systems who need verifiable timing parameters, low supply voltage operation, and a defined operating temperature range to support reliable integration and long-term system stability.

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