MT53E1G64D4NZ-46 WT:C

The MT53E1G64D4NZ-46 WT:C is a 64 Gbit parallel DRAM device built on Mobile LPDDR4 SDRAM technology. It implements a 1G × 64 memory organization and is supplied in a 376‑WFBGA (14 × 14) package.

Targeted for designs that require high-frequency, low-voltage DRAM, the device offers a 2.133 GHz clock frequency, 3.5 ns access time, and an operating voltage range of 1.06 V to 1.17 V, enabling compact memory integration for systems operating across a -25 °C to 85 °C temperature range.

Key Features

• Core / Architecture  Mobile LPDDR4 SDRAM architecture implemented as 1G × 64 organization for parallel memory operation.
• Memory Capacity  64 Gbit total density provided in a single device to support high-density memory subsystems.
• Performance  Clock frequency rated at 2.133 GHz with a 3.5 ns access time and 18 ns write cycle time (word page) for low-latency read/write response.
• Power  Operating supply voltage range of 1.06 V to 1.17 V for low-voltage DRAM operation.
• Interface  Parallel memory interface compatible with parallel DRAM system designs.
• Package  376‑WFBGA package (14 × 14 mm) suitable for compact board-level integration.
• Operating Conditions  Rated operating temperature range from -25 °C to 85 °C (TC).

Typical Applications

• Mobile Devices  Used as LPDDR4 DRAM in mobile and handheld device memory subsystems where low-voltage, high-frequency operation is required.
• Embedded Systems  Integrates into embedded platforms that need 64 Gbit DRAM density in a compact WFBGA package.
• Consumer Electronics  Provides high-density parallel DRAM for consumer products operating within the specified temperature and voltage ranges.

Unique Advantages

• High density in a single device: 64 Gbit capacity in a 1G × 64 organization reduces the number of memory packages required on a board.
• High-frequency operation: 2.133 GHz clock frequency supports designs that require elevated DRAM bandwidth within LPDDR4 architecture constraints.
• Low-voltage operation: 1.06 V to 1.17 V supply range enables reduced power consumption compared to higher-voltage DRAM solutions.
• Fast access and write timing: 3.5 ns access time and 18 ns write cycle time (word page) help meet tight latency budgets in memory subsystems.
• Compact footprint: 376‑WFBGA (14 × 14) package supports high-density board layouts.
• Extended temperature range: Rated -25 °C to 85 °C for operation across varied environmental conditions.

Why Choose IC DRAM 64GBIT PAR 376WFBGA?

The MT53E1G64D4NZ-46 WT:C positions itself as a high-density, low-voltage LPDDR4 DRAM option for designs that require a parallel memory interface, elevated clock frequencies, and compact package integration. Its 64 Gbit capacity, 1G × 64 organization, and 376‑WFBGA footprint make it suitable for applications where board space and memory density are key considerations.

Designers seeking consistent electrical characteristics within the specified voltage and temperature ranges can leverage this device to scale memory capacity while maintaining fast access times and write-cycle performance.

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