MT53E1G64D4NW-046 WT:C TR
| Part Description |
IC DRAM 64GBIT 432VFBGA |
|---|---|
| Quantity | 1,433 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 2 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | N/A | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | N/A | Memory Interface | N/A | Memory Organization | N/A | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G64D4NW-046 WT:C TR – IC DRAM 64GBIT 432VFBGA
The MT53E1G64D4NW-046 WT:C TR is a 64 Gbit DRAM device implemented using Mobile LPDDR4X SDRAM technology. It is supplied in a 432-ball Very Fine Ball Grid Array (432-VFBGA) with a 15×15 mm footprint.
This device provides high-density memory capacity in a compact VFBGA package suitable for designs that require LPDDR4X-class DRAM capacity and a small land footprint.
Key Features
- Memory Technology Implemented as SDRAM—Mobile LPDDR4X technology as specified in the product data.
- Memory Capacity 64 Gbit DRAM capacity, offering high-density storage for memory subsystems.
- Package 432-VFBGA package with a 15×15 mm footprint, enabling compact board-level integration.
- Memory Format Device is specified as DRAM, suitable for systems that use LPDDR4X DRAM devices.
Typical Applications
- Mobile devices — Use in systems requiring Mobile LPDDR4X DRAM capacity in a compact package.
- High-density memory modules — Integration where 64 Gbit DRAM capacity is needed in a small BGA footprint.
- Embedded memory subsystems — Deployment in designs that specify LPDDR4X-class DRAM in 432-VFBGA packaging.
Unique Advantages
- High-density capacity: 64 Gbit memory size provides substantial DRAM capacity for demanding memory requirements.
- LPDDR4X technology: Specified as Mobile LPDDR4X SDRAM to match LPDDR4X memory architectures.
- Compact package: 432-VFBGA (15×15 mm) package delivers a small footprint for space-constrained board designs.
- Standard DRAM format: Supplied as DRAM, aligning with designs that require standard DRAM integration.
Why Choose MT53E1G64D4NW-046 WT:C TR?
The MT53E1G64D4NW-046 WT:C TR positions itself as a high-density LPDDR4X DRAM device in a compact 432-VFBGA package, addressing designs that need substantial memory capacity with a small board footprint. Its specification as Mobile LPDDR4X SDRAM and 64 Gbit capacity make it suitable where those exact characteristics are required.
This device is appropriate for customers specifying LPDDR4X DRAM and seeking a 15×15 mm VFBGA package for integration. Its form factor and capacity support scalable memory implementation while matching designs that reference LPDDR4X DRAM technology.
Request a quote or submit a product inquiry to receive pricing and availability information for the MT53E1G64D4NW-046 WT:C TR.
