MT53E1G64D4HJ-046 WT:A TR
| Part Description |
IC DRAM 64GBIT PAR 556WFBGA |
|---|---|
| Quantity | 260 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 556-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G64D4HJ-046 WT:A TR – IC DRAM 64GBIT PAR 556WFBGA
The MT53E1G64D4HJ-046 WT:A TR from Micron Technology Inc. is a 64 Gbit parallel DRAM device implemented with SDRAM - Mobile LPDDR4X technology. It is organized as 1G x 64 and is provided in a 556-ball WFBGA/TFBGA package family.
Designed for high-density memory requirements, this part combines a 1G x 64 memory organization with a parallel interface and a specified clock frequency of 2.133 GHz, making it suitable for systems that require substantial memory capacity and defined high-speed operation.
Key Features
- Memory Core SDRAM - Mobile LPDDR4X technology as specified for the device.
- Memory Capacity & Organization 64 Gbit total capacity organized as 1G x 64.
- Interface Parallel memory interface as listed in the product specifications.
- Clock Frequency Specified operating clock frequency of 2.133 GHz.
- Package Package case listed as 556-TFBGA; supplier device package listed as 556-WFBGA (12.4x12.4).
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Mobile devices Use as high-density DRAM memory in mobile and handheld systems leveraging Mobile LPDDR4X technology.
- High-capacity memory subsystems Integration into memory modules and subsystems requiring 64 Gbit density and a parallel interface.
- Consumer electronics Deployment in consumer-grade products that require defined high-density DRAM components.
Unique Advantages
- High-density 64 Gbit capacity: Supports designs that need large memory capacity in a single DRAM device.
- 1G x 64 organization: Provides a wide data path via the 64-bit organization for parallel memory architectures.
- Specified 2.133 GHz clock frequency: Defined clock rate for planning system memory timing and throughput requirements.
- 556-ball BGA package options: Available as 556-TFBGA and listed supplier package 556-WFBGA (12.4x12.4) for board-level footprint planning.
- Micron manufacturing: Supplied by Micron Technology Inc., a known manufacturer listed in the product data.
Why Choose MT53E1G64D4HJ-046 WT:A TR?
The MT53E1G64D4HJ-046 WT:A TR is positioned as a high-density parallel DRAM device based on Mobile LPDDR4X SDRAM architecture, offering a 1G x 64 organization and a specified 2.133 GHz clock frequency. Its 64 Gbit capacity and 556-ball BGA package options facilitate integration into designs that require substantial on-board memory within a defined footprint.
This part is suitable for engineers and procurement teams specifying memory components for mobile and high-capacity memory subsystem applications where the listed technical attributes—capacity, organization, interface type, clock frequency, and package—match design requirements.
Request a quote or submit an inquiry for pricing and availability to begin the procurement process for the MT53E1G64D4HJ-046 WT:A TR.
