MT53E1G64D4HJ-046 WT:A

The MT53E1G64D4HJ-046 WT:A is a 64 Gbit DRAM device from Micron Technology, implemented as mobile LPDDR4X SDRAM with a 1G x 64 memory organization. It provides a parallel memory interface in a 556-ball BGA package intended for high-density memory assemblies.

This device targets systems and designs that require a 64 Gbit parallel DRAM component delivered in a 556-ball package, offering a specified clock frequency of 2.133 GHz suitable for designs that reference LPDDR4X architecture.

Key Features

• Memory Technology SDRAM implemented as Mobile LPDDR4X, reflecting the device's architecture and signaling class.
• Memory Density & Organization 64 Gbit total capacity arranged as 1G x 64, providing a wide data bus organization for parallel memory designs.
• Clock Frequency Rated for operation at a clock frequency of 2.133 GHz, as specified in the product data.
• Memory Interface Parallel memory interface, aligning with parallel DRAM subsystem requirements.
• Package 556-ball BGA packaging listed as 556-TFBGA and supplier device package 556-WFBGA (12.4 × 12.4 mm), enabling compact board-level integration.
• Memory Format DRAM format suitable for applications requiring dynamic random-access memory components.

Typical Applications

• Mobile Devices Use as high-density LPDDR4X SDRAM in mobile platforms that specify mobile SDRAM technology and parallel memory organization.
• Compact Memory Modules Integration into compact board designs that require a 64 Gbit DRAM in a 12.4 × 12.4 mm, 556-ball BGA footprint.
• Parallel Memory Subsystems Deployment in systems that employ parallel DRAM interfaces and 1G × 64 memory organization for data-path alignment.

Unique Advantages

• High memory capacity: 64 Gbit total capacity supports designs needing substantial DRAM density in a single device.
• Wide data organization: 1G × 64 configuration provides a 64-bit data path suitable for parallel memory architectures.
• Defined high clock rate: Specified 2.133 GHz clock frequency supports designs that require that signaling rate.
• LPDDR4X SDRAM architecture: Identified as Mobile LPDDR4X SDRAM in the product data, matching architectures that reference LPDDR4X specifications.
• Compact BGA package: 556-ball package with supplier package dimensions of 12.4 × 12.4 mm enables dense board-level placement.

Why Choose MT53E1G64D4HJ-046 WT:A?

The MT53E1G64D4HJ-046 WT:A positions itself as a high-density DRAM component built on mobile LPDDR4X SDRAM architecture, with a 1G × 64 organization and a 2.133 GHz clock rating. Its 556-ball BGA package with a 12.4 × 12.4 mm footprint provides a compact option for designs requiring a parallel 64 Gbit DRAM device.

This device is suited to design teams and procurement looking for a Micron-manufactured DRAM component with explicit density, organization, interface type, clock frequency, and package details as provided in the product specifications.

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