MT53E1G64D4HJ-046 AIT:C TR

The MT53E1G64D4HJ-046 AIT:C TR is a 64 Gbit volatile DRAM organized as 1G × 64 using Mobile LPDDR4X SDRAM architecture. It provides a parallel memory interface optimized for high-speed, low-voltage operation.

Designed with AEC-Q100 qualification and an automotive grade designation, the device targets systems that require high clock rates and robust temperature tolerance while maintaining low supply voltage and fast access times.

Key Features

• Memory Core and Organization  64 Gbit density organized as 1G × 64 for wide parallel data paths and high aggregate bandwidth.
• Technology  Mobile LPDDR4X SDRAM architecture supporting parallel memory interface operation.
• Performance  Supports a clock frequency of 2.133 GHz and an access time of 3.5 ns for low-latency data access.
• Power  Operates from a low supply voltage range of 1.06 V to 1.17 V to reduce dynamic power consumption in low-voltage systems.
• Timing  Write cycle time (word page) specified at 18 ns for predictable write performance.
• Qualification and Grade  AEC-Q100 qualified and marked as Automotive grade for use in qualifying automotive designs.
• Package  Available in a 556-WFBGA package (556-TFBGA / 556-WFBGA) with package outline 12.4×12.4 for compact board-level integration.
• Operating Range  Temperature rating from −40°C to 95°C (TC) to support extended environmental conditions.

Unique Advantages

• Automotive-qualified memory: AEC-Q100 qualification and Automotive grade designation provide traceable qualification status for safety- and reliability-focused designs.
• High-speed operation: 2.133 GHz clock frequency and 3.5 ns access time enable high-throughput, low-latency memory transactions.
• Low-voltage efficiency: 1.06–1.17 V supply range reduces power consumption compared with higher-voltage DRAM options.
• Compact WFBGA package: 556-WFBGA with 12.4×12.4 footprint simplifies placement in space-constrained PCBs.
• Wide operating temperature: −40°C to 95°C rating supports designs that must operate across broad thermal environments.
• Predictable write timing: 18 ns write cycle time for word page supports deterministic system timing analysis.

Why Choose IC DRAM 64GBIT PAR 556WFBGA?

The MT53E1G64D4HJ-046 AIT:C TR positions itself as a high-density, automotive-grade LPDDR4X DRAM option delivering fast access, low-voltage operation, and a compact 556-WFBGA footprint. Its combination of AEC-Q100 qualification, extended temperature range, and specified timing parameters makes it suitable for engineers specifying reliable, high-performance volatile memory in constrained designs.

This device is appropriate for designs that require scalable memory density with automotive-grade qualification, clear electrical and timing characteristics, and a compact package for tight board layouts. Its defined voltage, timing, and thermal parameters support predictable system design and long-term integration planning.

Request a quote or contact sales to discuss availability, pricing, and how the MT53E1G64D4HJ-046 AIT:C TR can meet your project requirements.