MT53E1G64D4HJ-046 AIT:A TR
| Part Description |
IC DRAM 64GBIT PAR 556WFBGA |
|---|---|
| Quantity | 237 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 556-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G64D4HJ-046 AIT:A TR – IC DRAM 64GBIT PAR 556WFBGA
The MT53E1G64D4HJ-046 AIT:A TR from Micron Technology Inc. is a 64 Gbit DRAM device implemented in SDRAM - Mobile LPDDR4X technology. It is organized as 1G x 64 with a parallel memory interface and supports a clock frequency of 2.133 GHz.
This device is intended for applications that require high-density DRAM in a compact ball-grid array package, providing designers with a discrete 64 Gbit memory component in a 556-WFBGA (12.4×12.4) package.
Key Features
- Memory Technology SDRAM implemented as Mobile LPDDR4X per the product specification.
- Density & Organization 64 Gbit total capacity arranged as 1G x 64 bits.
- Performance Specified clock frequency of 2.133 GHz.
- Interface Parallel memory interface as listed in the product data.
- Package Available in a 556-TFBGA / 556-WFBGA footprint with package dimensions 12.4 × 12.4 mm.
- Manufacturer Micron Technology Inc. listed as the supplier.
Typical Applications
- High-density memory modules Use as a discrete 64 Gbit DRAM component where large memory capacity is required on board-level designs.
- Mobile LPDDR4X platform integration Applicable to designs specifying Mobile LPDDR4X SDRAM technology.
- Compact board-level memory Suited for systems that require a high-density DRAM in a 556-WFBGA (12.4×12.4) package footprint.
Unique Advantages
- High memory capacity: 64 Gbit density provides substantial on-board storage in a single DRAM device.
- Wide data organization: 1G × 64 organization supports wide data paths at the device level.
- Specified high clock rate: 2.133 GHz clock frequency as listed in the specifications supports high-speed operation within the stated parameter.
- Mobile LPDDR4X technology: Implemented using SDRAM - Mobile LPDDR4X as indicated in the product data.
- Compact package: 556-WFBGA (12.4×12.4) package enables high-density placement on space-constrained PCBs.
- Established manufacturer: Supplied by Micron Technology Inc., as noted in the product information.
Why Choose IC DRAM 64GBIT PAR 556WFBGA?
The MT53E1G64D4HJ-046 AIT:A TR positions itself as a high-density DRAM device combining a 64 Gbit capacity, 1G × 64 organization, and a 2.133 GHz clock frequency in a compact 556-WFBGA package. These documented attributes make it suitable for designs requiring a discrete, high-capacity DRAM component implemented in Mobile LPDDR4X SDRAM technology.
Engineers specifying a Micron-manufactured DRAM with the listed package and performance characteristics will find this part appropriate for board-level integration where capacity, documented clock frequency, and package footprint are primary selection criteria.
Request a quote or submit an inquiry for MT53E1G64D4HJ-046 AIT:A TR to obtain pricing and availability information.
