MT53E1G64D4HJ-046 AAT:A TR

IC DRAM 64GBIT PAR 556WFBGA
Part Description

IC DRAM 64GBIT PAR 556WFBGA

Quantity 712 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package556-WFBGA (12.4x12.4)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4X
Memory Size64 GbitAccess TimeN/AGradeN/A
Clock Frequency2.133 GHzVoltageN/AMemory TypeN/A
Operating TemperatureN/AWrite Cycle Time Word PageN/APackaging556-TFBGA
Mounting MethodN/AMemory InterfaceParallelMemory Organization1G x 64
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unaffected
QualificationN/AECCNN/AHTS CodeN/A

Overview of MT53E1G64D4HJ-046 AAT:A TR – IC DRAM 64GBIT PAR 556WFBGA

The MT53E1G64D4HJ-046 AAT:A TR is a 64 Gbit DRAM device implemented as Mobile LPDDR4X SDRAM in a parallel memory configuration. It offers a 1G x 64 memory organization and is specified for operation at a 2.133 GHz clock frequency.

This part is intended for designs that require a high-density LPDDR4X memory component in a compact BGA package, providing a clear specification set for integration into parallel memory subsystems.

Key Features

  • Core Technology  SDRAM implemented as Mobile LPDDR4X, provided as the device's defined memory technology.
  • Memory Capacity  64 Gbit total memory size, organized as 1G × 64 for single-device high-density integration.
  • Performance  Specified clock frequency of 2.133 GHz for timing reference in system design.
  • Interface  Parallel memory interface; the device is presented with a 1G × 64 organization for parallel data paths.
  • Package  556-ball TFBGA package case listed as 556-TFBGA and supplier device package noted as 556-WFBGA with a 12.4 × 12.4 mm footprint.

Typical Applications

  • Mobile memory subsystems  Integration where Mobile LPDDR4X SDRAM is required and a 1G × 64 organization supports system memory mapping.
  • Embedded systems with parallel memory interfaces  Designs that implement parallel DRAM interfaces and need a defined 64 Gbit device option.
  • High-density memory arrays  Use in applications requiring single-device high capacity in a compact 556-ball BGA footprint.

Unique Advantages

  • High-density single-device capacity: 64 Gbit memory in one DRAM package reduces component count for high-capacity designs.
  • Clear memory organization: 1G × 64 organization simplifies data-path planning and bus allocation in parallel implementations.
  • Defined timing capability: Specified clock frequency of 2.133 GHz provides a concrete performance parameter for system timing and validation.
  • Compact BGA packaging: 556-ball WFBGA/TFBGA options with a 12.4 × 12.4 mm footprint support compact board layouts.
  • Mobile LPDDR4X architecture: Device technology is listed as Mobile LPDDR4X, aligning the part with LPDDR4X-based memory architectures.

Why Choose MT53E1G64D4HJ-046 AAT:A TR?

The MT53E1G64D4HJ-046 AAT:A TR combines a Mobile LPDDR4X SDRAM architecture with a 64 Gbit capacity and a 1G × 64 organization, delivered in a compact 556-ball BGA package. These explicit specifications make the device suitable for designs that require a well-defined high-density parallel DRAM element and known clocking behavior.

This part is appropriate for engineers and procurement teams specifying LPDDR4X-class DRAM where capacity, organization, package footprint, and a 2.133 GHz clock specification are primary selection criteria.

Request a quote or submit an inquiry to receive pricing and availability information for the MT53E1G64D4HJ-046 AAT:A TR.

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