MT53E1G64D4HJ-046 AAT:A TR
| Part Description |
IC DRAM 64GBIT PAR 556WFBGA |
|---|---|
| Quantity | 712 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 556-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E1G64D4HJ-046 AAT:A TR – IC DRAM 64GBIT PAR 556WFBGA
The MT53E1G64D4HJ-046 AAT:A TR is a 64 Gbit DRAM device implemented as Mobile LPDDR4X SDRAM in a parallel memory configuration. It offers a 1G x 64 memory organization and is specified for operation at a 2.133 GHz clock frequency.
This part is intended for designs that require a high-density LPDDR4X memory component in a compact BGA package, providing a clear specification set for integration into parallel memory subsystems.
Key Features
- Core Technology SDRAM implemented as Mobile LPDDR4X, provided as the device's defined memory technology.
- Memory Capacity 64 Gbit total memory size, organized as 1G × 64 for single-device high-density integration.
- Performance Specified clock frequency of 2.133 GHz for timing reference in system design.
- Interface Parallel memory interface; the device is presented with a 1G × 64 organization for parallel data paths.
- Package 556-ball TFBGA package case listed as 556-TFBGA and supplier device package noted as 556-WFBGA with a 12.4 × 12.4 mm footprint.
Typical Applications
- Mobile memory subsystems Integration where Mobile LPDDR4X SDRAM is required and a 1G × 64 organization supports system memory mapping.
- Embedded systems with parallel memory interfaces Designs that implement parallel DRAM interfaces and need a defined 64 Gbit device option.
- High-density memory arrays Use in applications requiring single-device high capacity in a compact 556-ball BGA footprint.
Unique Advantages
- High-density single-device capacity: 64 Gbit memory in one DRAM package reduces component count for high-capacity designs.
- Clear memory organization: 1G × 64 organization simplifies data-path planning and bus allocation in parallel implementations.
- Defined timing capability: Specified clock frequency of 2.133 GHz provides a concrete performance parameter for system timing and validation.
- Compact BGA packaging: 556-ball WFBGA/TFBGA options with a 12.4 × 12.4 mm footprint support compact board layouts.
- Mobile LPDDR4X architecture: Device technology is listed as Mobile LPDDR4X, aligning the part with LPDDR4X-based memory architectures.
Why Choose MT53E1G64D4HJ-046 AAT:A TR?
The MT53E1G64D4HJ-046 AAT:A TR combines a Mobile LPDDR4X SDRAM architecture with a 64 Gbit capacity and a 1G × 64 organization, delivered in a compact 556-ball BGA package. These explicit specifications make the device suitable for designs that require a well-defined high-density parallel DRAM element and known clocking behavior.
This part is appropriate for engineers and procurement teams specifying LPDDR4X-class DRAM where capacity, organization, package footprint, and a 2.133 GHz clock specification are primary selection criteria.
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