MT53E1G64D4NZ-046 WT:C TR

The MT53E1G64D4NZ-046 WT:C TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4X technology with a 1G x 64 memory organization. It provides a parallel memory interface in a compact 376-WFBGA (14×14) package.

Designed for low-voltage mobile memory applications, the device combines a 2.133 GHz clock frequency, 3.5 ns access time and a supply voltage range of 1.06 V to 1.17 V to deliver dense DRAM capacity with reduced operating voltage and a small footprint. The part is specified for operation from -25°C to 85°C.

Key Features

• Memory Core 64 Gbit DRAM organized as 1G × 64, implemented in Mobile LPDDR4X technology.
• Performance 2.133 GHz clock frequency and a 3.5 ns access time provide fast memory access for bandwidth-sensitive applications.
• Interface Parallel memory interface suited to systems designed for wide data paths and high-throughput operation.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to support power-constrained designs.
• Timing Write cycle time (word page) specified at 18 ns for deterministic write timing characteristics.
• Package 376-WFBGA (14×14) package that enables high-density placement in space-constrained board layouts.
• Operating Temperature Rated for −25°C to 85°C (TC) to cover a range of commercial and industrial temperature conditions.
• Memory Format & Mounting Volatile DRAM intended for surface-mount integration in system designs.

Typical Applications

• Mobile devices — Dense, low-voltage LPDDR4X memory for mobile platforms requiring compact, high-capacity DRAM.
• Embedded systems — Memory for embedded designs that need parallel DRAM with defined timing and low supply voltage.
• Space-constrained boards — 376-WFBGA (14×14) package supports designs where PCB area is limited.

Unique Advantages

• High density in a compact package: 64 Gbit capacity in a 376-WFBGA (14×14) footprint reduces board area for large-memory designs.
• Low-voltage operation: 1.06 V to 1.17 V supply range lowers power draw in battery- or energy-sensitive systems.
• Fast access and clocking: 3.5 ns access time and 2.133 GHz clock frequency support demanding memory throughput.
• Deterministic write timing: 18 ns word-page write cycle time helps with predictable system timing and memory scheduling.
• Wide operating temperature: −25°C to 85°C rating enables deployment across varied environmental conditions.
• Parallel interface: 1G × 64 organization provides a wide data path for high-bandwidth system architectures.

Why Choose IC DRAM 64GBIT PAR 376WFBGA?

The MT53E1G64D4NZ-046 WT:C TR positions itself as a high-density, low-voltage Mobile LPDDR4X DRAM option for designs that require substantial memory capacity in a compact WFBGA package. Its combination of a 1G × 64 organization, 2.133 GHz clocking, and 3.5 ns access time delivers measurable performance characteristics for systems designed around parallel memory interfaces.

This device is suited to engineers and procurement teams targeting mobile and embedded platforms where board space, power budget, and thermal range are key considerations. The specified electrical, timing, and package details make it straightforward to evaluate for long-term integration into products that require dense, low-voltage DRAM.

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