MT53E1G32D2FW-046 IT:C TR
| Part Description |
IC DRAM 32GBIT PAR 200TFBGA |
|---|---|
| Quantity | 588 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 2.133 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | 200-TFBGA | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53E1G32D2FW-046 IT:C TR – IC DRAM 32GBIT PAR 200TFBGA
The MT53E1G32D2FW-046 IT:C TR is a 32 Gbit DRAM device implemented in a Mobile LPDDR4 SDRAM architecture. It provides a 1G × 32 memory organization with a parallel memory interface and a specified clock frequency of 2.133 GHz.
This component is supplied in a 200‑TFBGA package (10 × 14.5 mm), intended for designs that require high-density DRAM in a compact BGA footprint.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture as specified in the product data.
- Density 32 Gbit total memory capacity, enabling high-density memory configurations.
- Organization 1G × 32 memory organization for parallel data paths and predictable mapping.
- Performance Clock frequency specified at 2.133 GHz to meet system timing requirements that reference this rate.
- Interface Parallel memory interface as indicated in the product information.
- Package 200‑TFBGA package, supplier package dimension 10 × 14.5 mm for compact board-level integration.
- Memory Format DRAM format suitable for designs requiring dynamic random-access memory in the stated capacity and organization.
Typical Applications
- Mobile Devices Acts as high-density LPDDR4 DRAM for mobile platforms that specify Mobile LPDDR4 architecture and 1G × 32 organization.
- Compact Embedded Systems Provides 32 Gbit of DRAM in a 200‑TFBGA package for space-constrained embedded designs requiring a parallel interface.
- High-Density Memory Subsystems Used where a 1G × 32 organization and 2.133 GHz clocking are part of the memory subsystem specification.
Unique Advantages
- High memory capacity: 32 Gbit density supports applications requiring substantial DRAM capacity within a single device.
- Defined performance point: Clock frequency of 2.133 GHz provides a clear specification for system timing and performance planning.
- Parallel 1G × 32 organization: Offers a straightforward data path architecture for systems designed around parallel DRAM interfaces.
- Compact BGA packaging: 200‑TFBGA (10 × 14.5 mm) packaging facilitates board-level integration in space-limited designs.
- Mobile LPDDR4 technology: Delivered in a Mobile LPDDR4 SDRAM architecture as stated in the product details.
Why Choose MT53E1G32D2FW-046 IT:C TR?
The MT53E1G32D2FW-046 IT:C TR positions itself as a high-density Mobile LPDDR4 DRAM component with a clear set of specifications—32 Gbit capacity, 1G × 32 organization, a 2.133 GHz clock frequency, and a 200‑TFBGA package. These attributes make it suitable for designs that require defined memory capacity and a parallel interface within a compact package footprint.
Choose this device when your design requires a specified LPDDR4 DRAM solution with explicit organization and frequency parameters to match system timing and board integration requirements.
Request a quote or contact sales to discuss availability, pricing, and delivery options for MT53E1G32D2FW-046 IT:C TR.
