MT53E1G32D2FW-046 IT:A TR

The MT53E1G32D2FW-046 IT:A TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4X SDRAM technology with a parallel memory interface. It is organized as 1G × 32 and targets applications that require high data rate memory in a compact BGA package.

Key attributes include a 2.133 GHz clock frequency, low-voltage operation across 1.06 V to 1.17 V, and a 200-TFBGA (10 × 14.5 mm) package footprint, offering a balance of density, speed, and space-efficient integration for mobile and high-bandwidth designs.

Key Features

• Core Memory Technology Mobile LPDDR4X SDRAM implementation providing volatile DRAM storage with a 32 Gbit capacity.
• Memory Organization & Interface Organized as 1G × 32 with a parallel memory interface suited to parallel DRAM topologies.
• High-Speed Operation Supports a clock frequency of 2.133 GHz for high-throughput data transfer.
• Low-Voltage Power Operates from 1.06 V to 1.17 V, enabling lower-power memory operation consistent with mobile LPDDR4X technology.
• Timing Write cycle time (word page) specified at 18 ns for deterministic write performance.
• Package and Footprint Supplied in a 200-TFBGA package with dimensions 10 × 14.5 mm for compact board-level integration.
• Operating Temperature Range Rated for −40°C to 95°C (TC) to cover a broad thermal envelope for deployed electronics.

Typical Applications

• Mobile Devices Memory subsystem use in mobile-class devices where Mobile LPDDR4X technology and low-voltage operation are required.
• High-Bandwidth Memory Subsystems Parallel interface and 2.133 GHz clocking address applications that require higher data throughput.
• Space-Constrained PCB Designs The 200-TFBGA (10 × 14.5 mm) package suits compact board layouts where package footprint is a consideration.

Unique Advantages

• High density in a compact package: 32 Gbit capacity in a 200-TFBGA (10 × 14.5 mm) footprint simplifies high-density memory integration.
• High-clock performance: 2.133 GHz clock frequency supports elevated data throughput for demanding memory operations.
• Low-voltage operation: 1.06 V to 1.17 V supply range reduces power draw compared with higher-voltage memory options.
• Deterministic write timing: 18 ns write cycle time (word page) provides a defined timing characteristic for system design.
• Wide operating temperature: −40°C to 95°C rating enables deployment across a broad thermal range.
• Parallel interface: Parallel memory interface supports integration into parallel DRAM architectures.

Why Choose MT53E1G32D2FW-046 IT:A TR?

The MT53E1G32D2FW-046 IT:A TR from Micron Technology Inc. positions itself as a high-density, low-voltage Mobile LPDDR4X DRAM option suited to designs that require compact, high-bandwidth memory. Its 1G × 32 organization, 2.133 GHz clocking, and defined write timing make it applicable for systems where throughput and predictable timing are key design considerations.

This device is appropriate for customers needing a space-efficient 32 Gbit DRAM solution with broad operating temperature support and a parallel interface. The combination of capacity, package size, voltage range, and timing characteristics supports scalability and integration into mobile and high-bandwidth memory subsystems.

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