MT53E1G32D2FW-046 AUT:C TR

IC DRAM 32GBIT PAR 200TFBGA

Part Description	IC DRAM 32GBIT PAR 200TFBGA
Quantity	256 Available (as of May 5, 2026)

Product Category	Memory
Manufacturer	Micron Technology Inc.
Manufacturing Status	Active
Manufacturer Standard Lead Time	6 Weeks
Datasheet	Download Datasheet

Specifications & Environmental

Device Package	200-TFBGA (10x14.5)	Memory Format	DRAM	Technology	SDRAM - Mobile LPDDR4X
Memory Size	32 Gbit	Access Time	3.5 ns	Grade	Automotive
Clock Frequency	2.133 GHz	Voltage	1.06V ~ 1.17V	Memory Type	Volatile
Operating Temperature	-40°C ~ 125°C (TC)	Write Cycle Time Word Page	18 ns	Packaging	200-TFBGA
Mounting Method	Volatile	Memory Interface	Parallel	Memory Organization	1G x 32
Moisture Sensitivity Level	N/A	RoHS Compliance	Unknown	REACH Compliance	REACH Unaffected
Qualification	AEC-Q100	ECCN	N/A	HTS Code	N/A

Overview of MT53E1G32D2FW-046 AUT:C TR – IC DRAM 32GBIT PAR 200TFBGA

The MT53E1G32D2FW-046 AUT:C TR from Micron Technology Inc. is a 32 Gbit parallel DRAM device implemented in Mobile LPDDR4X SDRAM technology with a 1G × 32 memory organization. It provides high-density volatile memory in a compact 200-TFBGA (10 × 14.5) package.

Designed for high-speed operation, the device supports a 2.133 GHz clock frequency, 3.5 ns access time and an 18 ns write cycle time. With AEC-Q100 qualification, an operating temperature range of -40°C to 125°C (TC), and an automotive grade designation, it targets demanding environments that require both performance and reliability.

Key Features

Core / Memory Architecture Mobile LPDDR4X SDRAM technology with a 1G × 32 organization delivering 32 Gbit of DRAM capacity.
Performance Supports a 2.133 GHz clock frequency, 3.5 ns access time and an 18 ns write cycle time for high-speed memory access.
Power Operates from a 1.06 V to 1.17 V supply range for low-voltage DRAM operation.
Interface Parallel memory interface and DRAM memory format designed for embedded system integration.
Package 200-TFBGA package (10 × 14.5 mm) for compact board-level integration.
Temperature & Qualification AEC-Q100 qualification and an operating temperature range of -40°C to 125°C (TC) appropriate for automotive environments.

Typical Applications

Automotive Electronics Memory for automotive modules where AEC-Q100 qualification and wide operating temperature range are required.
High-density Embedded Systems Provides 32 Gbit of volatile storage for embedded designs requiring a 1G × 32 parallel DRAM organization.
Compact Module Integration Suitable for designs that need high-capacity DRAM in a 200-TFBGA (10 × 14.5) footprint.

Unique Advantages

Automotive-grade qualification: AEC-Q100 rating and -40°C to 125°C operating range support deployment in demanding environments.
High-density memory: 32 Gbit capacity reduces the need for multiple devices in high-capacity designs.
High-speed operation: 2.133 GHz clock and 3.5 ns access time enable rapid data access and buffering.
Low-voltage supply: 1.06 V to 1.17 V operation helps manage system power budgets.
Compact package: 200-TFBGA (10 × 14.5) form factor simplifies board layout for space-constrained applications.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AUT:C TR combines high-density LPDDR4X DRAM architecture with high-speed timing and an automotive-grade qualification profile. Its specification set—32 Gbit capacity, 2.133 GHz clock support, low-voltage operation and AEC-Q100 qualification—positions it for designs that require both performance and reliability in challenging temperature ranges.

This device is well-suited for engineers developing automotive and embedded systems that need compact, high-performance parallel DRAM. Its combination of capacity, speed and a 200-TFBGA package supports integration into space-constrained boards while maintaining the electrical and environmental characteristics specified for automotive-grade components.

Request a quote or contact sales to discuss availability and pricing for the MT53E1G32D2FW-046 AUT:C TR.

Request a Quote