MT53E1G32D2FW-046 AUT:B

The MT53E1G32D2FW-046 AUT:B is a 32 Gbit mobile LPDDR4/LPDDR4X SDRAM device in a 200-ball TFBGA package designed for high-bandwidth parallel memory applications. It delivers a 1G × 32 memory organization with high data rates and automotive-grade qualification for use in demanding environments.

With a 2133 MHz clock (4266 MT/s), low-voltage operation and a wide operating temperature range, this DRAM is intended for systems requiring sustained throughput, energy-efficient operation and robust environmental performance.

Key Features

• Core Architecture  Mobile LPDDR4 / LPDDR4X SDRAM architecture optimized for parallel memory interfaces.
• Density & Organization  32 Gbit total capacity implemented as 1G × 32 component configuration to support wide bus implementations.
• Performance  2133 MHz clock frequency (4266 MT/s) with programmable CAS latency and typical access time of 3.5 ns for high-throughput applications.
• Power  Low-voltage operation with supply range of 1.06 V–1.17 V and I/O voltage listed at 0.6 V to enable energy-efficient system design.
• Timing  Write cycle time (word/page) of 18 ns to support sustained memory transactions.
• Automotive Qualification & Reliability  AEC-Q100 qualified and specified for an operating temperature range of −40 °C to +125 °C (TC), suitable for automotive-grade system requirements.
• Package  200-ball TFBGA (10 × 14.5 mm) compact package supporting high-density board placement.

Typical Applications

• Automotive systems  Automotive-grade LPDDR4 memory for high-bandwidth electronic control units, infotainment or compute modules requiring extended temperature operation and AEC-Q100 qualification.
• Mobile and handheld devices  Mobile LPDDR4/LPDDR4X memory for devices that require a compact 200-TFBGA package and high data-rate parallel memory interface.
• Embedded compute platforms  High-throughput embedded systems and on-board compute modules that need 32 Gbit capacity with a x32 data bus for parallel memory access.

Unique Advantages

• High sustained bandwidth: 2133 MHz (4266 MT/s) operation supports demanding data-transfer requirements.
• Automotive-grade reliability: AEC-Q100 qualification and −40 °C to +125 °C temperature rating address harsh-environment requirements.
• Large capacity in compact footprint: 32 Gbit density in a 200-TFBGA (10 × 14.5 mm) package enables high memory integration on space-constrained boards.
• Low-voltage operation: 1.06 V–1.17 V supply with 0.6 V I/O reduces system power consumption compared with higher-voltage alternatives.
• Wide interface compatibility: 1G × 32 organization and parallel memory interface simplify integration into wide-bus memory subsystems.
• Production-ready component: Part status indicated as production, suitable for deployment in volume designs.

Why Choose MT53E1G32D2FW-046 AUT:B?

The MT53E1G32D2FW-046 AUT:B combines high-density LPDDR4 memory performance with automotive-grade qualification and a compact TFBGA package. Its combination of 32 Gbit capacity, 2133 MHz data rate, low-voltage operation and extended temperature rating positions it for designs that demand throughput, efficiency and environmental robustness.

This device is well suited for engineers and procurement teams specifying memory for automotive and high-performance embedded systems where production status, standardized package geometry and AEC-Q100 qualification are required for reliable, long-term deployment.

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