MT53E1G32D2FW-046 AIT:C

The MT53E1G32D2FW-046 AIT:C is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR4X SDRAM with a 1G × 32 memory organization and a parallel memory interface. It is supplied in a 200‑TFBGA (10 × 14.5 mm) package and targets high-density, high-speed memory applications.

Designed for mobile and automotive use, the device supports a clock frequency of 2.133 GHz, an access time of 3.5 ns, and operates over a temperature range of −40 °C to 95 °C (TC). It carries AEC‑Q100 qualification and operates from a 1.06 V to 1.17 V supply.

Key Features

• Memory Core / Architecture 32 Gbit capacity organized as 1G × 32 in Mobile LPDDR4X SDRAM format for high-density memory integration.
• Performance Supports a 2.133 GHz clock frequency with a 3.5 ns access time and an 18 ns write cycle time (word page) for fast read/write responsiveness.
• Power Operates from a 1.06 V to 1.17 V supply voltage range consistent with LPDDR4X low-voltage operation.
• Interface Parallel memory interface and standard DRAM format suitable for designs requiring parallel LPDDR4X memory.
• Package Supplied in a 200‑TFBGA package (10 × 14.5 mm) for compact board-level integration.
• Temperature Range Rated for operation from −40 °C to 95 °C (TC) for deployment in temperature-challenged environments.
• Qualification / Grade AEC‑Q100 qualified and listed with Automotive grade suitable for automotive design requirements.

Typical Applications

• Automotive systems Use as high-density, automotive‑qualified DRAM for in-vehicle systems where AEC‑Q100 qualification and extended temperature operation are required.
• Mobile devices Serves as LPDDR4X memory for mobile-class architectures needing 32 Gbit capacity and 2.133 GHz clocking.
• Embedded memory modules Integrates into compact PCBs thanks to the 200‑TFBGA package and 1G × 32 organization for space-constrained designs.

Unique Advantages

• High density — 32 Gbit: Enables large memory pools in a single device to reduce BOM and simplify memory subsystem design.
• High-speed operation: 2.133 GHz clock and 3.5 ns access time support demanding bandwidth requirements.
• Automotive qualification: AEC‑Q100 rating and Automotive grade provide documented qualification for automotive programs.
• Extended temperature range: −40 °C to 95 °C (TC) supports deployments across a broad environmental range.
• Compact TFBGA package: 200‑TFBGA (10 × 14.5 mm) offers a small footprint for dense board layouts.
• Low-voltage operation: 1.06 V to 1.17 V supply range aligns with LPDDR4X power domains for efficient system integration.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AIT:C positions itself as a high-density, high-speed Mobile LPDDR4X DRAM option from Micron Technology Inc., combining 32 Gbit capacity with a compact 200‑TFBGA package and parallel interface. Its electrical and timing characteristics—2.133 GHz clocking, 3.5 ns access time, and 18 ns write cycle time—are aimed at designs that require fast, dense volatile memory.

With AEC‑Q100 qualification, Automotive grade designation, and an operating temperature range of −40 °C to 95 °C, this device is suited for automotive and mobile applications where qualification and environmental tolerance matter. The device’s density, package, and voltage profile support integration into designs that demand compact, high-capacity memory building blocks.

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