MT53E1G32D2FW-046 AIT:C TR

The MT53E1G32D2FW-046 AIT:C TR is a 32 Gbit volatile DRAM device using SDRAM - Mobile LPDDR4X architecture with a 1G × 32 organization and a parallel memory interface. It is supplied in a 200‑TFBGA (10 × 14.5 mm) package and is specified for operation across a wide temperature range.

Targeted for designs that require high-density, high-speed DRAM in constrained board space, this device provides a 2.133 GHz clock frequency, a 3.5 ns access time and an operating voltage range of 1.06 V to 1.17 V. The part carries AEC‑Q100 qualification and an operating temperature range of −40°C to 95°C (TC), aligning it with automotive-grade requirements.

Key Features

• Core & Memory Organization Mobile LPDDR4X SDRAM architecture implemented as 1G × 32, delivering a total memory density of 32 Gbit in DRAM format.
• Performance Clock frequency of 2.133 GHz, access time of 3.5 ns and a word page write cycle time of 18 ns for deterministic timing characteristics.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V suitable for modern low-voltage system designs.
• Interface Parallel memory interface compatible with parallel DRAM controller architectures.
• Temperature & Qualification Automotive grade with AEC‑Q100 qualification and an operating temperature range of −40°C to 95°C (TC).
• Package 200‑TFBGA package case (10 × 14.5 mm) for compact, surface‑mount integration.

Typical Applications

• Automotive systems — Memory for automotive electronics and subsystems where AEC‑Q100 qualification and extended temperature range are required.
• Mobile and embedded devices — High-density LPDDR4X DRAM for compact mobile or embedded designs that use mobile SDRAM architectures.
• Infotainment and telematics — On-board storage for data buffering and system memory in automotive infotainment and telematics modules.
• High-speed buffering — Applications that require predictable read/write timing and high clock rates for frame or data buffering.

Unique Advantages

• Automotive-qualified memory: AEC‑Q100 qualification combined with −40°C to 95°C operating range supports deployment in automotive environments.
• High density in a compact package: 32 Gbit capacity in a 200‑TFBGA (10 × 14.5 mm) package conserves board area while providing large memory capacity.
• Low-voltage operation: Supported supply range of 1.06 V to 1.17 V aligns with low-voltage system designs.
• Deterministic timing: 3.5 ns access time and 18 ns word page write cycle time provide predictable performance for timing-sensitive designs.
• High clock capability: 2.133 GHz clock frequency enables high-rate data transfer when paired with compatible system interfaces.
• Parallel interface: 1G × 32 organization and parallel connectivity simplify integration with parallel DRAM controllers.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AIT:C TR combines 32 Gbit LPDDR4X SDRAM density with automotive-grade qualification and a compact 200‑TFBGA package. Its specified clock rate, access times and voltage range provide a clear set of electrical and timing characteristics for system designers to use in high-density, high-speed memory applications.

This device is suitable for engineers designing automotive and embedded systems that require AEC‑Q100 qualified DRAM, broad operating temperature capability and compact packaging. It offers a balance of capacity, timing predictability and low-voltage operation for robust system implementations.

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