MT53E1G32D2FW-046 AUT:A TR

The MT53E1G32D2FW-046 AUT:A TR is a 32 Gbit volatile DRAM device using mobile LPDDR4X SDRAM architecture in a 1G x 32 organization. It provides high-speed parallel memory operation with a clock frequency of 2.133 GHz and a write cycle time for a word page of 18 ns.

Designed and manufactured by Micron Technology Inc., this device targets systems requiring high-density, high-performance memory with low-voltage operation (1.06 V to 1.17 V) and extended temperature capability, backed by AEC-Q100 qualification for automotive-grade deployments.

Key Features

• Core / Memory 32 Gbit DRAM organized as 1G x 32 using mobile LPDDR4X SDRAM architecture for parallel memory operation.
• Performance 2.133 GHz clock frequency with an 18 ns write cycle time (word page) to support high-throughput memory access patterns.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to reduce power consumption in constrained systems.
• Qualification & Temperature AEC-Q100 qualified with an operating temperature range of -40 °C to 125 °C (TC), suitable for demanding thermal environments.
• Package 200-TFBGA package (10 × 14.5 mm) for compact, board-mounted integration.
• Form & Interface Volatile DRAM memory format with a parallel memory interface suitable for mobile LPDDR4X designs.

Typical Applications

• Automotive Systems — AEC-Q100 qualification and extended temperature range make this device suitable for automotive electronic control units and in-vehicle systems requiring robust memory.
• Mobile Devices — Mobile LPDDR4X architecture and low-voltage operation align with high-density memory needs in smartphones, tablets, and similar portable electronics.
• Infotainment & ADAS — High clock rate and compact 200-TFBGA packaging support bandwidth and space requirements in infotainment and advanced driver-assistance system modules.

Unique Advantages

• Automotive-grade qualification: AEC-Q100 certified and rated for -40 °C to 125 °C operation, supporting deployment in automotive environments.
• High-density memory: 32 Gbit capacity in a single 1G x 32 device reduces board-level component count for high-capacity designs.
• High-speed operation: 2.133 GHz clock frequency and 18 ns write cycle time enable fast parallel memory access for bandwidth-sensitive applications.
• Low-voltage efficiency: 1.06–1.17 V supply range enables lower power consumption for mobile and battery-powered systems.
• Compact package: 200-TFBGA (10 × 14.5 mm) package supports compact PCB layouts and efficient board integration.

Why Choose MT53E1G32D2FW-046 AUT:A TR?

The MT53E1G32D2FW-046 AUT:A TR combines high density, high-speed LPDDR4X architecture and low-voltage operation with automotive-grade qualification, positioning it for designs that require reliable memory performance across wide temperature ranges. Its 200-TFBGA packaging and 1G x 32 organization offer a compact solution for systems where board space and memory capacity are critical.

This device is suited to engineers and procurement teams designing automotive, mobile, and high-performance embedded systems who need a verified, manufacturer-backed DRAM solution from Micron Technology Inc. The combination of performance, integration density, and temperature/qualification credentials supports long-term deployment in demanding environments.

If you need pricing, lead-time details, or to request a formal quote for MT53E1G32D2FW-046 AUT:A TR, please submit a quote request or contact sales for assistance.