MT53E1G32D2FW-046 AUT:B TR

The MT53E1G32D2FW-046 AUT:B TR is a 32 Gbit SDRAM device based on Mobile LPDDR4X architecture with a 1G x 32 memory organization and a parallel memory interface. It is provided in a 200-TFBGA (10 × 14.5 mm) package and is AEC-Q100 qualified for automotive-grade applications.

With a specified clock frequency of 2.133 GHz, an access time of 3.5 ns and an operating temperature range of −40°C to 125°C, this DRAM targets designs that require high-density, high-speed volatile memory in thermally demanding and high-reliability environments.

Key Features

• Core / Memory Architecture Mobile LPDDR4X SDRAM with a 1G × 32 memory organization delivering 32 Gbit total capacity.
• Performance Specified clock frequency of 2.133 GHz and an access time of 3.5 ns for high-throughput operation.
• Timing Write cycle time (word page) specified at 18 ns to support sustained write operations.
• Power Operates within a supply voltage range of 1.06 V to 1.17 V, matching LPDDR4X power domains.
• Package Supplied in a 200-TFBGA package (10 × 14.5 mm) optimized for compact, high-density board layouts.
• Temperature & Reliability Qualified to operate from −40°C to 125°C (TC) and AEC-Q100 qualified for automotive-grade reliability.
• Device Type & Interface Volatile DRAM with a parallel memory interface suitable for system memory subsystems.

Typical Applications

• Mobile devices — Mobile LPDDR4X architecture provides the memory organization and interface suited to high-density mobile memory subsystems.
• Automotive systems — AEC-Q100 qualification and a −40°C to 125°C operating range support use in automotive-grade electronics and related environments.
• High-density parallel memory subsystems — 1G × 32 organization and 32 Gbit capacity enable compact, high-capacity implementations in space-constrained designs.

Unique Advantages

• Automotive-grade qualification: AEC-Q100 qualification and extended temperature rating (−40°C to 125°C) provide traceable reliability for automotive and harsh-environment designs.
• High density in a compact package: 32 Gbit capacity in a 200-TFBGA (10 × 14.5 mm) package reduces board area for high-density memory requirements.
• High-frequency operation: 2.133 GHz clock frequency and 3.5 ns access time support demanding throughput requirements.
• Optimized timing for writes: 18 ns write cycle time (word page) supports efficient write operations in system workflows.
• Low-voltage operation: 1.06 V to 1.17 V supply range aligns with LPDDR4X power domains for power-sensitive designs.

Why Choose MT53E1G32D2FW-046 AUT:B TR?

The MT53E1G32D2FW-046 AUT:B TR combines Mobile LPDDR4X architecture, high density (32 Gbit), and automotive-grade qualification to deliver a reliable, high-performance volatile memory option for designs requiring compact packaging and extended temperature operation. Its parallel interface and 1G × 32 organization make it suitable for systems that need dense, fast DRAM in constrained form factors.

Manufactured by Micron Technology Inc., this device is positioned for engineers and procurement teams building mobile-class and automotive-grade systems where defined timing, voltage, and thermal characteristics are required. The combination of specified clock speed, access time, package footprint, and AEC-Q100 qualification supports long-term deployment in demanding environments.

If you would like pricing, availability, or to request a quote for MT53E1G32D2FW-046 AUT:B TR, submit an inquiry to request a formal quote or additional technical information.