MT53E1G32D2FW-046 AIT:B

The MT53E1G32D2FW-046 AIT:B is a 32 Gbit volatile DRAM device implementing mobile LPDDR4X SDRAM architecture in a 200-TFBGA package. It is organized as 1G x 32 with a parallel memory interface, designed to provide high-density, mobile LPDDR4X memory in a compact form factor.

Engineered with AEC-Q100 qualification and an operating temperature range of −40°C to 95°C (TC), the device targets applications that require automotive-grade reliability, low-voltage operation (1.06 V–1.17 V), and high clock performance up to 2.133 GHz with a 3.5 ns access time.

Key Features

• Memory Core  — 32 Gbit LPDDR4X SDRAM organized as 1G × 32 with a parallel DRAM interface for high-density memory integration.
• Performance  — Supports up to 2.133 GHz clock frequency with a 3.5 ns access time and an 18 ns write cycle time (word page) for fast memory operations.
• Power  — Low-voltage operation with a supply range of 1.06 V to 1.17 V to support power-sensitive designs.
• Package  — 200-TFBGA package (10 × 14.5 mm) for compact board-level implementation.
• Qualification & Temperature  — AEC-Q100 qualified and rated for operation from −40°C to 95°C (TC), suitable for temperature-critical applications.

Typical Applications

• Automotive systems  — Provides high-density volatile memory with AEC-Q100 qualification and extended temperature rating for in-vehicle electronics.
• Mobile and embedded platforms  — Serves as LPDDR4X memory in compact systems requiring 32 Gbit capacity and high clock performance.
• Industrial controllers  — Fits industrial designs demanding extended temperature operation and reliable, high-density DRAM.

Unique Advantages

• High density: 32 Gbit capacity consolidates large memory requirements into a single device, reducing BOM complexity.
• High-speed access: 2.133 GHz clock and 3.5 ns access time deliver fast read/write cycles; 18 ns write cycle time (word page) supports efficient page operations.
• Low-voltage operation: 1.06 V–1.17 V supply range supports energy-efficient system designs.
• Automotive-grade qualification: AEC-Q100 certification and −40°C to 95°C operating range enable deployment in demanding automotive environments.
• Compact package: 200-TFBGA (10 × 14.5 mm) simplifies integration where board space is constrained.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AIT:B positions itself as a high-density LPDDR4X DRAM solution that balances high clock performance, low-voltage operation, and automotive-grade qualification. Its combination of 32 Gbit capacity, 2.133 GHz clock capability, and compact 200-TFBGA package supports designs that require both performance and space-efficient integration.

Ideal for engineers developing automotive, mobile, or industrial systems, this device offers verifiable electrical and environmental specifications—such as AEC-Q100 qualification and a −40°C to 95°C operating range—providing long-term reliability and predictable behavior in temperature-sensitive applications.

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