MT53E1G32D2FW-046 IT:B

The MT53E1G32D2FW-046 IT:B is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4X SDRAM technology with a parallel memory interface. It provides a 1G × 32 memory organization and is intended for designs requiring high-density, high-frequency volatile memory.

Key attributes include a 2.133 GHz clock frequency, low-voltage operation (1.06 V–1.17 V), and a compact 200-TFBGA (10 × 14.5 mm) package, making it suitable for space-constrained systems that require fast access times and extended operating temperature range.

Key Features

• Memory Core  32 Gbit DRAM organized as 1G × 32 using Mobile LPDDR4X SDRAM technology.
• Interface  Parallel memory interface for direct DRAM integration.
• Performance  2.133 GHz clock frequency with a 3.5 ns access time and an 18 ns write cycle time (word/page).
• Power  Low-voltage operation with a supply range of 1.06 V to 1.17 V.
• Package  200-TFBGA package (10 × 14.5 mm) for high-density board integration.
• Operating Range  Specified operating temperature range of −40°C to 95°C (TC).
• Mounting & Format  Volatile DRAM memory format designed for surface-mount assembly in a 200-TFBGA case.

Typical Applications

• Mobile devices  Mobile LPDDR4X technology and low-voltage operation make this device suitable for compact mobile system memory implementations.
• Embedded systems  High-density 32 Gbit capacity supports embedded platforms that require substantial volatile memory in a small package.
• Communications and networking equipment  High clock frequency and fast access times support memory-demanding buffering and packet-processing tasks.

Unique Advantages

• High-density capacity: 32 Gbit memory reduces the need for multiple devices to achieve large volatile memory pools.
• High-frequency operation: 2.133 GHz clock and 3.5 ns access time provide responsive memory performance for bandwidth-sensitive tasks.
• Low-voltage design: 1.06 V–1.17 V supply range helps minimize power draw in energy-conscious designs.
• Compact package: 200-TFBGA (10 × 14.5 mm) enables integration into space-constrained PCBs.
• Extended temperature support: −40°C to 95°C operating range supports deployment across a wide set of thermal environments.

Why Choose MT53E1G32D2FW-046 IT:B?

The MT53E1G32D2FW-046 IT:B combines high-density LPDDR4X SDRAM architecture with fast timing and low-voltage operation, offering a balanced solution for designs that demand substantial volatile memory with efficient power characteristics. Its compact 200-TFBGA package and extended temperature range make it suitable for systems where board space and environmental tolerance are important.

This device is appropriate for designers working on mobile, embedded, and communications platforms that need a reliable, high-capacity parallel DRAM component. Its specifications support long-term use in applications that require predictable performance and integration into space-limited layouts.

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