MT53E1G32D2FW-046 AAT:B TR

The MT53E1G32D2FW-046 AAT:B TR is a 32 Gbit DRAM device implemented with Mobile LPDDR4X SDRAM architecture and a parallel 1G x 32 memory organization. It combines high clock capability with automotive-grade qualification to serve high-density memory requirements in compact package formats.

Key electrical and environmental parameters include a 2.133 GHz clock frequency, 3.5 ns access time, a supply range of 1.06 V to 1.17 V, and an operating temperature range of −40°C to 105°C. The device is supplied in a 200-TFBGA (10 × 14.5 mm) package and is AEC-Q100 qualified.

Key Features

• Core & Memory Organization 32 Gbit capacity organized as 1G × 32, provided as DRAM with a parallel memory interface.
• Technology Implemented using Mobile LPDDR4X SDRAM technology for mobile LPDDR4X system architectures.
• Performance 2.133 GHz clock frequency with a 3.5 ns access time and an 18 ns write cycle time for word-page operations.
• Power Operates from a 1.06 V to 1.17 V supply range, consistent with LPDDR4X device voltage requirements.
• Qualification & Grade AEC-Q100 qualification and automotive grade designation for use in qualified automotive designs.
• Package & Temperature Supplied in a 200-TFBGA (10 × 14.5 mm) package with an operating temperature range of −40°C to 105°C.
• Mounting & Format Volatile memory mounting type in a compact BGA package suitable for surface-mount assembly.

Typical Applications

• Automotive systems — Memory for automotive electronics where AEC-Q100 qualification and −40°C to 105°C operating range are required.
• Mobile devices — High-density LPDDR4X DRAM for mobile platform memory subsystems needing a 1G × 32 parallel organization and 2.133 GHz operation.
• Embedded systems — Compact 200-TFBGA package for embedded designs that require 32 Gbit DRAM capacity in space-constrained layouts.
• Industrial electronics — Extended temperature operation suitable for industrial applications requiring robust thermal performance.

Unique Advantages

• High memory density: 32 Gbit capacity in a single 200-TFBGA package reduces board-level component count for high-capacity designs.
• High-speed operation: 2.133 GHz clock frequency with 3.5 ns access time and 18 ns write cycle time supports demanding throughput requirements.
• Automotive qualification: AEC-Q100 qualification and automotive grade classification provide alignment with automotive design requirements.
• Extended temperature range: −40°C to 105°C operating range supports designs exposed to wide temperature variations.
• Tight supply window: 1.06 V to 1.17 V supply range consistent with LPDDR4X system voltage domains.
• Compact package: 200-TFBGA (10 × 14.5 mm) format enables high-density board layouts in space-constrained assemblies.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AAT:B TR positions itself as a high-density, high-speed LPDDR4X DRAM option with explicit automotive qualification. Its combination of 32 Gbit capacity, 2.133 GHz clock capability, and a compact 200-TFBGA package makes it suitable for designs that require significant memory capacity in a constrained footprint while meeting automotive environmental and qualification requirements.

Manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams specifying memory for automotive, mobile, and embedded applications that need verifiable electrical, thermal, and qualification characteristics for long-term deployment.

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