MT53D512M64D8TZ-053 WT ES:B

The MT53D512M64D8TZ-053 WT ES:B is a volatile DRAM device using Mobile LPDDR4 technology, offering a 32 Gbit memory capacity in a 512M × 64 organization. Designed for applications that require high-density mobile SDRAM, the device is specified for 1.866 GHz operation and a 1.1 V supply.

This part provides a compact FBGA package option and an operating temperature range of −30°C to 85°C (TC), making it suitable for systems that require LPDDR4 memory density and the specified electrical and thermal characteristics.

Key Features

• Memory Core  Mobile LPDDR4 SDRAM architecture providing volatile DRAM storage suitable for system memory roles.
• Capacity & Organization  32 Gbit total capacity arranged as 512M × 64 for high-density memory integration.
• Clock & Performance  Specified clock frequency of 1.866 GHz to meet defined timing and throughput requirements.
• Power  1.1 V nominal voltage supply consistent with LPDDR4 low-voltage operation.
• Temperature Range  Operating temperature specified from −30°C to 85°C (TC) for deployment within the stated thermal envelope.
• Memory Format & Mounting  DRAM memory format with volatile mounting type and FBGA packaging as indicated in the product designation.

Typical Applications

• Mobile devices  Use as high-density LPDDR4 system memory in mobile and handheld platforms that require 32 Gbit DRAM.
• Embedded computing  Integration into embedded systems needing a compact FBGA memory solution with defined voltage and temperature ranges.
• Memory subsystems  Deployment within memory modules or subsystems where 512M × 64 organization and 1.866 GHz operation are required.

Unique Advantages

• High memory density: 32 Gbit capacity enables consolidation of system memory requirements into a single DRAM device.
• Defined organization: 512M × 64 layout simplifies address and data bus planning for system designers.
• Low-voltage operation: 1.1 V supply supports LPDDR4 power targets and can help reduce overall system power draw consistent with the technology.
• Specified high-frequency support: 1.866 GHz clock frequency aligns the device with designs targeting that operational speed.
• Broad operating temperature: −30°C to 85°C (TC) rating provides a defined thermal range for system thermal management planning.
• Mobile LPDDR4 technology: Use of LPDDR4 SDRAM technology provides a clear technology baseline for integration into compatible platforms.

Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?

The IC DRAM 32GBIT 1.866GHZ FBGA (MT53D512M64D8TZ-053 WT ES:B) positions itself as a high-density LPDDR4 DRAM option offering 32 Gbit capacity, 1.866 GHz operation, and 1.1 V supply requirements. Its 512M × 64 organization and FBGA packaging support integration in space-constrained designs that require this specific LPDDR4 memory configuration.

This device is suited for designers and engineers building mobile and embedded platforms who require clearly specified electrical, organizational, and thermal characteristics backed by Micron Technology Inc.

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