MT53E1G32D2FW-046 AAT:A

The MT53E1G32D2FW-046 AAT:A is a 32 Gbit parallel DRAM device implemented in Mobile LPDDR4X architecture. It provides a 1G × 32 memory organization with a high-frequency clocking option and is supplied in a compact 200‑TFBGA (10 × 14.5 mm) package.

Designed and qualified to AEC‑Q100 standards, this volatile memory component targets automotive-grade designs and other systems that require high-density, high-speed LPDDR4X DRAM with defined electrical and thermal limits.

Key Features

• Core / Memory Architecture Mobile LPDDR4X SDRAM architecture with a memory organization of 1G × 32, delivering a total memory size of 32 Gbit.
• Performance Supports a clock frequency of 2.133 GHz for high-rate data transfer in parallel DRAM systems.
• Power Operates within a supply voltage range of 1.06 V – 1.17 V, enabling tight system power-rail design.
• Timing Write cycle timing specified with a word-page write cycle time of 18 ns.
• Qualification & Grade AEC‑Q100 qualification and listed as Automotive grade, supporting reliability requirements for automotive applications.
• Package & Mounting Supplied in a 200‑TFBGA package (10 × 14.5 mm) suitable for BGA surface-mount integration.
• Operating Temperature Rated for operation from -40°C to 105°C (TC), accommodating extended temperature environments.

Typical Applications

• Automotive systems — AEC‑Q100 qualification and automotive grade make this LPDDR4X DRAM suitable for memory subsystems in automotive electronic control units and infotainment platforms.
• High-density memory modules — 32 Gbit capacity in a 1G × 32 organization supports designs requiring compact, high-density DRAM.
• Embedded electronics — Parallel DRAM interface and defined timing characteristics enable integration into embedded memory architectures where high throughput is required.

Unique Advantages

• AEC‑Q100 Qualified: Qualification to AEC‑Q100 supports use in automotive-grade applications with defined reliability expectations.
• High Capacity in Compact Package: 32 Gbit density packaged in a 200‑TFBGA (10 × 14.5 mm) footprint for space-constrained designs.
• High-Speed Operation: 2.133 GHz clock frequency provides high transfer rates for bandwidth-sensitive systems.
• Tight Supply Voltage Window: 1.06 V – 1.17 V operating range enables precise power-rail design and predictable power behavior.
• Extended Temperature Rating: −40°C to 105°C (TC) supports deployment in systems exposed to wide thermal ranges.
• Deterministic Timing: Specified write cycle time (18 ns word-page) supports timing-aware memory subsystem design.

Why Choose IC DRAM 32GBIT PAR 200TFBGA?

The MT53E1G32D2FW-046 AAT:A positions itself as a high-density, high-speed LPDDR4X DRAM option with automotive-grade qualification. Its combination of 32 Gbit capacity, 2.133 GHz clocking, defined timing, and AEC‑Q100 qualification makes it suitable for designers who require both performance and proven reliability within a compact BGA footprint.

This device is intended for designs that need a compact, automotive‑qualified DRAM element with a controlled voltage window and wide operating temperature range, offering predictable electrical and thermal characteristics for long-term system reliability.

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