MT53D512M64D8HR-053 WT:B
| Part Description |
IC DRAM 32GBIT 1.866GHZ 366WFBGA |
|---|---|
| Quantity | 610 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 366-WFBGA (12x12.7) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 366-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D8HR-053 WT:B – 32 Gbit Mobile LPDDR4 DRAM, 1.866 GHz, 366-WFBGA
The MT53D512M64D8HR-053 WT:B is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 512M × 64 memory organization and operates at a clock frequency of 1.866 GHz.
Designed for applications requiring high-density, high-frequency mobile DRAM in a compact footprint, this device offers a low-voltage 1.1 V supply and a 366-WFBGA package (12 × 12.7 mm) to support space-constrained system designs.
Key Features
- Memory Core 32 Gbit capacity organized as 512M × 64, delivered as volatile DRAM for system memory use.
- Technology SDRAM – Mobile LPDDR4 architecture for mobile-oriented memory implementations.
- Performance Clock frequency of 1.866 GHz to support high-speed memory transactions.
- Power 1.1 V supply voltage to support low-voltage operation typical of mobile memory systems.
- Package 366-WFBGA package in a 12 × 12.7 mm footprint for compact board integration.
- Operating Range Rated for an operating temperature range of -30°C to 85°C (TC).
Typical Applications
- Mobile Devices Mobile LPDDR4 technology makes this device suitable for memory subsystems in mobile and handheld equipment.
- Embedded Memory Subsystems High-density 32 Gbit organization supports embedded system designs requiring large volatile memory pools.
- Compact System Designs 366-WFBGA (12 × 12.7 mm) package enables integration into space-constrained PCBs and modules.
- Low-Voltage Platforms 1.1 V supply fits designs targeting reduced power consumption at the component level.
Unique Advantages
- High memory density: 32 Gbit capacity provides substantial on-board volatile storage for memory-intensive tasks.
- High-speed operation: 1.866 GHz clock frequency supports fast memory access and throughput requirements.
- Low-voltage operation: 1.1 V supply reduces power draw compared with higher-voltage alternatives.
- Compact packaging: 366-WFBGA (12 × 12.7 mm) minimizes PCB area for compact module and system designs.
- Wide operating temperature: Rated from -30°C to 85°C (TC) to accommodate a range of environmental conditions.
Why Choose MT53D512M64D8HR-053 WT:B?
The MT53D512M64D8HR-053 WT:B positions itself as a high-density, high-frequency mobile LPDDR4 DRAM option that balances performance and compact integration. Its 32 Gbit capacity, 1.866 GHz clock rate, and 1.1 V supply make it suitable for designs where memory density, speed, and low-voltage operation are priorities.
Manufactured by Micron Technology Inc., this device is intended for engineers and integrators building compact, memory-intensive systems that require a standardized Mobile LPDDR4 component in a 366-WFBGA package and an extended operating temperature range.
Request a quote or contact sales to discuss availability, pricing, and integration support for the MT53D512M64D8HR-053 WT:B.
