MT53D512M64D4SB-046 XT:D
| Part Description |
IC DRAM 32GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 198 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 105°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D512M64D4SB-046 XT:D – IC DRAM 32GBIT 2.133GHZ FBGA
The MT53D512M64D4SB-046 XT:D is a 32 Gbit volatile DRAM device implementing Mobile LPDDR4 SDRAM architecture. It provides a 512M × 64 memory organization with a high data-rate clock and low-voltage operation.
This device is suited for designs that require high-speed, low-voltage DRAM capacity where a 2.133 GHz clock frequency, 1.1 V supply, and extended operating temperature range are key considerations.
Key Features
- Memory Type and Technology Mobile LPDDR4 SDRAM volatile memory delivering LPDDR4 architecture in a DRAM format.
- Capacity and Organization 32 Gbit total capacity arranged as 512M × 64, supporting dense memory requirements.
- Clock Performance 2.133 GHz clock frequency for high data-rate operation.
- Power 1.1 V supply voltage for low-voltage memory operation.
- Operating Temperature Rated for −30°C to 105°C (TC), supporting extended temperature operation.
- Package FBGA package as indicated in the product name for surface-mount board integration.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Mobile devices Mobile LPDDR4 technology and 1.1 V operation make this device suitable for compact, power-sensitive mobile memory subsystems.
- Embedded systems High-density 32 Gbit capacity and 2.133 GHz clocking support embedded applications that require significant DRAM bandwidth.
- Temperature-challenged environments The −30°C to 105°C operating range enables use in systems that need extended temperature tolerance.
Unique Advantages
- High data-rate operation: 2.133 GHz clock frequency provides the performance headroom for high-throughput memory tasks.
- Large memory capacity: 32 Gbit (512M × 64) organization delivers substantial on-board DRAM for memory-intensive designs.
- Low-voltage design: 1.1 V supply reduces power consumption compared with higher-voltage memory options.
- Extended temperature range: −30°C to 105°C (TC) supports deployment in systems requiring broader thermal tolerance.
- LPDDR4 architecture: Mobile LPDDR4 technology aligns the device with low-power, high-performance memory requirements.
- Established manufacturer: Manufactured by Micron Technology Inc., providing traceability to a known DRAM supplier.
Why Choose IC DRAM 32GBIT 2.133GHZ FBGA?
The MT53D512M64D4SB-046 XT:D combines 32 Gbit capacity, a 2.133 GHz operating clock, and 1.1 V low-voltage operation in an LPDDR4 DRAM device from Micron Technology Inc. Its memory organization and thermal range make it a suitable option for designs that need high-density, high-speed DRAM with extended temperature tolerance.
This part is appropriate for engineers specifying mobile LPDDR4 DRAM where a balance of capacity, speed, and low-voltage operation is required. Its specifications support integration into systems that prioritize memory bandwidth and thermal resilience.
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