MT53D512M64D4SB-046 XT:D TR
| Part Description |
IC DRAM 32GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 1,306 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 105°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D4SB-046 XT:D TR – IC DRAM 32GBIT 2.133GHZ FBGA
The MT53D512M64D4SB-046 XT:D TR from Micron Technology Inc. is a 32 Gbit DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and operates at a clock frequency of 2.133 GHz, supplied at 1.1 V and provided in an FBGA package.
This device targets designs that require a high-density volatile memory component with a defined operating temperature range of −30°C to 105°C. Its specifications are suitable for systems that need a 32 Gbit mobile LPDDR4 memory element operating at 2.133 GHz.
Key Features
- Core / Memory 32 Gbit DRAM organized as 512M × 64 in Mobile LPDDR4 SDRAM technology; memory format is DRAM.
- Clock Performance Rated clock frequency of 2.133 GHz for timing-specific memory system designs.
- Power Nominal supply voltage of 1.1 V as specified for the device.
- Package Supplied in an FBGA package as indicated in the product name.
- Operating Temperature Specified operating temperature range from −30°C to 105°C (TC).
- Memory Organization 512M × 64 organization suitable for architects specifying bit-wide arrangements.
- Volatile Memory MemoryType and MountingType are specified as Volatile, indicating non‑persistent storage behavior.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Mobile devices — Implemented where Mobile LPDDR4 memory is required for system memory subsystems.
- Systems requiring 2.133 GHz memory — Used in designs that target a 2.133 GHz DRAM clock frequency.
- Designs with 1.1 V power rails — Suitable for products that provide a 1.1 V supply for memory components.
Unique Advantages
- High memory density: 32 Gbit capacity enables compact, high-density memory integration.
- Defined clock rate: 2.133 GHz rating provides a clear timing reference for memory subsystem design.
- Mobile LPDDR4 technology: Specified Mobile LPDDR4 SDRAM technology aligns with platform requirements that call for that DRAM family.
- Industry manufacturer: Supplied by Micron Technology Inc., providing traceable sourcing information.
- Wide operating range: −30°C to 105°C (TC) supports operation across a broad thermal envelope.
- Standard supply voltage: 1.1 V nominal supply simplifies power rail planning for compatible systems.
Why Choose IC DRAM 32GBIT 2.133GHZ FBGA?
The MT53D512M64D4SB-046 XT:D TR positions itself as a high-density Mobile LPDDR4 DRAM option with a specified 2.133 GHz clock frequency and a 1.1 V supply requirement. Its 512M × 64 organization and 32 Gbit capacity provide a defined hardware footprint for memory architects and system designers.
This device is well suited to designs that require a Mobile LPDDR4 memory element with known thermal and electrical characteristics. Choosing this part supports predictable integration into systems that match the provided specifications for capacity, clocking, voltage, and operating temperature.
Request a quote or contact sales to discuss availability, lead times, and pricing for MT53D512M64D4SB-046 XT:D TR.
