MT53D2048M32D8QD-053 WT:D TR

IC DRAM 64GBIT 1.866GHZ
Part Description

IC DRAM 64GBIT 1.866GHZ

Quantity 992 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time28 Weeks
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size64 GbitAccess TimeN/AGradeIndustrial
Clock Frequency1.866 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodVolatileMemory InterfaceN/AMemory Organization2G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of MT53D2048M32D8QD-053 WT:D TR – IC DRAM 64GBIT 1.866GHZ

The MT53D2048M32D8QD-053 WT:D TR is a 64 Gbit volatile DRAM device from Micron Technology Inc., implemented as mobile LPDDR4 SDRAM. It features a 2G × 32 memory organization and a 1.866 GHz clock frequency for high-speed memory access.

With a 1.1 V supply requirement and an operating temperature range of −30°C to 85°C, this LPDDR4 memory device is suited to designs that require high-density, high-frequency volatile memory within the specified voltage and thermal envelope.

Key Features

  • Memory Technology Mobile LPDDR4 SDRAM offering volatile DRAM storage in a 64 Gbit density.
  • Memory Organization 2G × 32 organization to support wide data-path architectures.
  • Clock Frequency 1.866 GHz operating clock for high-speed memory transactions.
  • Supply Voltage 1.1 V nominal voltage supply requirement.
  • Operating Temperature Specified operating range of −30°C to 85°C (TC).
  • Manufacturer & Part Micron Technology Inc. part number MT53D2048M32D8QD-053 WT:D TR.
  • Memory Format DRAM volatile memory type suitable for transient data storage.

Typical Applications

  • Mobile devices High-density LPDDR4 memory for mobile platforms requiring 64 Gbit capacity and 1.866 GHz performance.
  • Embedded computing Volatile system memory for embedded boards and modules operating within the specified temperature range.
  • Handheld electronics Compact DRAM for handheld products that use 1.1 V memory subsystems.

Unique Advantages

  • High-density capacity: 64 Gbit memory supports designs that require large volatile storage footprints.
  • High-frequency operation: 1.866 GHz clock frequency enables faster memory access cycles where higher throughput is required.
  • LPDDR4 architecture: Mobile LPDDR4 SDRAM provides a standard mobile memory technology choice.
  • Low-voltage operation: 1.1 V supply reduces memory voltage requirements for compatible system power rails.
  • Extended temperature range: −30°C to 85°C operating range supports deployments across a broad environmental span.
  • 2G × 32 organization: Wide memory organization suitable for data-path designs that leverage 32-bit lanes.

Why Choose IC DRAM 64GBIT 1.866GHZ?

The MT53D2048M32D8QD-053 WT:D TR positions itself as a high-density LPDDR4 DRAM option delivering 64 Gbit capacity and 1.866 GHz clock performance with 1.1 V operation. Its 2G × 32 organization and specified thermal range make it appropriate for designs that need predictable high-speed volatile memory within the listed electrical and environmental limits.

This Micron Technology Inc. device is suitable for engineers and procurement teams specifying mobile LPDDR4 memory for applications where capacity, frequency, and voltage are key selection criteria. The part provides a clear set of electrical and temperature specifications for integration into compatible system architectures.

Request a quote or submit an inquiry to receive pricing and availability information for MT53D2048M32D8QD-053 WT:D TR.

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