MT53D2048M32D8QD-053 WT:D
| Part Description |
IC DRAM 64GBIT 1.866GHZ |
|---|---|
| Quantity | 1,017 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D2048M32D8QD-053 WT:D – IC DRAM 64GBIT 1.866GHZ
The MT53D2048M32D8QD-053 WT:D is a 64 Gbit volatile memory device based on Mobile LPDDR4 SDRAM architecture. It is organized as 2G × 32 and operates with a clock frequency of 1.866 GHz, providing high-density DRAM in a low-voltage mobile SDRAM technology.
This device is targeted at applications requiring high memory capacity and LPDDR4 mobile SDRAM technology with a 1.1 V supply and an operating temperature range from -30°C to 85°C (TC).
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture, provided as a DRAM memory format for volatile storage.
- Density & Organization 64 Gbit total memory capacity organized as 2G × 32 to support high-density system memory designs.
- Clock Frequency Operates at 1.866 GHz clock frequency as specified for timing and performance planning.
- Power Low-voltage operation with a 1.1 V supply to align with mobile LPDDR4 power domains.
- Operating Temperature Rated for an operating temperature range of -30°C ~ 85°C (TC) for thermal planning and system integration.
- Volatile Memory Designed as volatile DRAM suitable for system memory applications requiring transient data storage.
Typical Applications
- Mobile devices Use as LPDDR4 system memory in mobile device designs where mobile SDRAM architecture and low voltage are required.
- High-density memory subsystems Integration into systems that require 64 Gbit DRAM capacity organized as 2G × 32.
- Embedded systems with LPDDR4 Suitable for embedded designs that specify Mobile LPDDR4 SDRAM technology and a 1.1 V supply.
Unique Advantages
- 64 Gbit capacity: Provides high-density DRAM in a single device to simplify memory capacity planning.
- LPDDR4 mobile architecture: Aligns with mobile SDRAM technology requirements for devices specifying LPDDR4.
- 1.866 GHz clock rate: Defined operating frequency for system timing and performance budgeting.
- Low-voltage operation (1.1 V): Matches low-voltage power domains common in mobile and power-sensitive designs.
- Broad operating temperature: Rated from -30°C to 85°C (TC) to support a range of thermal environments.
Why Choose IC DRAM 64GBIT 1.866GHZ?
The MT53D2048M32D8QD-053 WT:D positions itself as a high-density LPDDR4 DRAM option with a defined 1.866 GHz clock frequency and 1.1 V supply, suitable for designs that require substantial volatile memory capacity within mobile LPDDR4 architecture constraints. Its 2G × 32 organization and 64 Gbit capacity make it appropriate for systems where memory density and LPDDR4 technology are primary requirements.
This device is suited for engineers and procurement teams specifying Mobile LPDDR4 SDRAM at known operating temperature and voltage parameters, offering a clear set of electrical and organizational characteristics for integration into compatible memory subsystems.
Request a quote or submit an inquiry to sales to discuss availability and pricing for MT53D2048M32D8QD-053 WT:D.
