MT53D2048M32D8QD-053 WT ES:D

The MT53D2048M32D8QD-053 WT ES:D is a 64 Gbit volatile DRAM device implemented as mobile LPDDR4 SDRAM. It is organized as 2G × 32 and is specified for operation with a 1.866 GHz clock frequency and a 1.1 V supply.

This device targets designs that require high-density, low-voltage mobile SDRAM with defined thermal range support from −30°C to 85°C, offering a compact FBGA form factor for space-constrained implementations.

Key Features

• Memory Type & Architecture  Mobile LPDDR4 SDRAM implemented as volatile DRAM with a 64 Gbit density organized as 2G × 32.
• Clock Frequency  Supports a 1.866 GHz clock frequency for timing and throughput requirements aligned with the device specification.
• Supply Voltage  Operates at a 1.1 V supply voltage, consistent with low-voltage mobile memory applications.
• Temperature Range  Specified operating temperature from −30°C to 85°C (TC) for deployment across a range of environmental conditions.
• Form Factor  Supplied in an FBGA package as indicated by the product name for compact board-level integration.
• Memory Size & Organization  64 Gbit total capacity with a 2G × 32 organization to match 32-bit data interfaces.

Typical Applications

• Mobile and portable electronics  Provides high-density LPDDR4 memory suited to space-constrained handheld and portable systems.
• Embedded systems  Serves as system memory where low-voltage, high-capacity DRAM is required for application runtime data.
• High-density memory subsystems  Useful in designs requiring 64 Gbit capacity and 32-bit organization for memory subsystem scaling.

Unique Advantages

• High-density memory:  64 Gbit capacity allows consolidation of large memory requirements into a single device.
• Defined high-speed operation:  Specified support for a 1.866 GHz clock frequency enables timing consistent with the device specification.
• Low-voltage operation:  1.1 V supply reduces power domain requirements for mobile and low-power designs.
• Compact FBGA package:  Package choice supports compact board layouts and high integration density.
• Wide operating temperature:  −30°C to 85°C operating range supports deployment across varied thermal environments.
• Clear memory organization:  2G × 32 organization aligns with 32-bit data paths for straightforward system integration.

Why Choose MT53D2048M32D8QD-053 WT ES:D?

The MT53D2048M32D8QD-053 WT ES:D combines 64 Gbit LPDDR4 density with a 1.866 GHz clock specification and 1.1 V operation, making it suited to designs that require compact, low-voltage, high-density DRAM. Its 2G × 32 organization and FBGA form factor support integration into space-constrained and memory-dense systems.

This part is appropriate for engineers and designers building mobile and embedded platforms that need verifiable memory capacity, defined operating frequency, and temperature support. Its specification set provides a clear basis for system-level memory planning and long-term design consistency.

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