MT53D1G64D8NW-046 WT ES:E TR
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA 8DP |
|---|---|
| Quantity | 58 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1G64D8NW-046 WT ES:E TR – IC DRAM 64GBIT 2.133GHZ FBGA 8DP
The MT53D1G64D8NW-046 WT ES:E TR is a volatile DRAM device implementing Mobile LPDDR4 SDRAM architecture. It delivers a 64 Gbit memory capacity organized as 1G × 64 with a 2.133 GHz clock frequency and operates from a 1.1 V supply.
This device targets designs requiring high-density, high-frequency mobile memory and supports operation across an ambient temperature range of −30°C to 85°C (TC). The package designation in the product name indicates an FBGA 8DP form factor.
Key Features
- Core / Memory Architecture Mobile LPDDR4 SDRAM architecture providing the specified LPDDR4 feature set and behavior.
- Memory Capacity & Organization 64 Gbit total capacity, organized as 1G × 64 to support wide data paths in a single device.
- Clock Frequency 2.133 GHz operating clock frequency for high-bandwidth memory access.
- Power 1.1 V nominal voltage supply suitable for low-voltage mobile memory designs.
- Package FBGA 8DP packaging as indicated in the product designation.
- Memory Type Volatile DRAM memory format for system working memory requirements.
- Operating Temperature Rated for −30°C to 85°C (TC) to accommodate a range of ambient conditions.
Typical Applications
- Mobile devices LPDDR4 memory for mobile system designs where high-density, high-frequency memory is required.
- Compact computing modules High-capacity DRAM integration in space-constrained module designs demanding wide data lanes.
- Thermally varied environments Use in systems operating within the specified −30°C to 85°C temperature range.
Unique Advantages
- High memory density: 64 Gbit capacity enables significant memory in a single device footprint.
- High-frequency operation: 2.133 GHz clock frequency supports higher bandwidth memory transactions.
- Low-voltage operation: 1.1 V supply aligns with mobile power-rail requirements.
- Mobile LPDDR4 architecture: Designed around a mobile SDRAM technology suited to mobile-system memory needs.
- Extended temperature range: Rated −30°C to 85°C (TC) for deployment across a variety of ambient conditions.
- Single-device wide data organization: 1G × 64 organization simplifies memory subsystem design for wide data paths.
Why Choose MT53D1G64D8NW-046 WT ES:E TR?
This MT53D1G64D8NW-046 WT ES:E TR device positions itself as a high-density, high-frequency LPDDR4 memory option from Micron Technology Inc., combining 64 Gbit capacity, a 2.133 GHz clock, and 1.1 V operation in an FBGA 8DP footprint. The specified operating temperature range supports deployment across a range of ambient conditions.
It is suited to designers seeking a compact LPDDR4 DRAM solution for mobile-oriented and compact computing designs that require wide data organization and elevated memory bandwidth. The combination of capacity, clock rate, and low-voltage operation provides a clear, verifiable specification set for system-level memory selection.
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