MT53D1G32D4BD-053 WT:D

IC DRAM 32GBIT 1.866GHZ FBGA QDP
Part Description

IC DRAM 32GBIT 1.866GHZ FBGA QDP

Quantity 309 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeIndustrial
Clock Frequency1.866 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level1 (Unlimited)RoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT53D1G32D4BD-053 WT:D – IC DRAM 32GBIT 1.866GHZ FBGA QDP

The MT53D1G32D4BD-053 WT:D is a 32 Gbit volatile DRAM device implemented in SDRAM - Mobile LPDDR4 architecture by Micron Technology Inc. It is organized as 1G x 32 and specified for a clock frequency of 1.866 GHz with a 1.1 V supply.

This component targets designs that require high-density LPDDR4 memory in an FBGA QDP package and operation across a temperature range of -30°C ~ 85°C (TC).

Key Features

  • Memory Technology  SDRAM - Mobile LPDDR4 architecture as specified in the product data.
  • Capacity & Organization  32 Gbit total capacity, organized as 1G × 32.
  • Clock Frequency  Specified operating clock frequency of 1.866 GHz.
  • Supply Voltage  Operates from a 1.1 V supply voltage.
  • Package  Described as an FBGA QDP package in the product name.
  • Operating Temperature  Specified temperature range of -30°C ~ 85°C (TC).
  • Memory Type  Volatile DRAM format intended for LPDDR4 applications.

Typical Applications

  • Mobile LPDDR4 memory subsystems — Component can be used where LPDDR4 SDRAM at 1.866 GHz and 32 Gbit density is required.
  • High-density memory modules — Suitable for designs needing a 1G × 32 DRAM device to achieve 32 Gbit capacity.
  • Thermally constrained environments — Usable in systems operating across the specified -30°C ~ 85°C (TC) range.

Unique Advantages

  • High memory density: 32 Gbit capacity enables compact designs requiring large DRAM storage.
  • LPDDR4 architecture: Explicit Mobile LPDDR4 technology and 1.866 GHz clock frequency provide a defined performance point for qualifying system memory interfaces.
  • Low-voltage operation: 1.1 V supply supports designs targeting lower supply voltage domains.
  • Clear temperature specification: Rated for -30°C ~ 85°C (TC), allowing planning for target operating environments.
  • Standard memory organization: 1G × 32 organization simplifies memory planning and addressing for system architects.

Why Choose IC DRAM 32GBIT 1.866GHZ FBGA QDP?

The MT53D1G32D4BD-053 WT:D delivers a defined LPDDR4 memory option with 32 Gbit density, 1G × 32 organization and a 1.866 GHz clock specification sourced from Micron Technology Inc. Its 1.1 V supply requirement and specified operating temperature range support designs targeting mobile LPDDR4 memory implementations and similar applications.

This device is appropriate for engineers and procurement teams seeking a high-density LPDDR4 DRAM component with explicit electrical and thermal parameters to match system requirements and integration constraints.

Request a quote or submit an inquiry to receive pricing and availability information for the MT53D1G32D4BD-053 WT:D.

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