MT53D1024M64D8PM-053 WT:D TR
| Part Description |
IC DRAM 64GBIT 1.866GHZ |
|---|---|
| Quantity | 235 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M64D8PM-053 WT:D TR – IC DRAM 64GBIT 1.866GHZ
The MT53D1024M64D8PM-053 WT:D TR is a volatile SDRAM device based on Mobile LPDDR4 technology, offered by Micron Technology Inc. It provides a 64 Gbit memory capacity organized as 1G × 64 and operates at a clock frequency of 1.866 GHz.
Designed for applications that require high-density mobile LPDDR4 memory with low-voltage operation, this device targets memory subsystem designs and embedded/mobile systems where bandwidth and power efficiency are important considerations.
Key Features
- Memory Technology – Mobile LPDDR4 Implements LPDDR4 SDRAM architecture suited for mobile-oriented memory subsystems.
- Capacity & Organization 64 Gbit total memory organized as 1G × 64 to support wide data-path configurations.
- Clock Frequency Operates at a clock frequency of 1.866 GHz to support higher data-rate operation within the LPDDR4 family.
- Power Supply Low-voltage operation at 1.1 V consistent with mobile LPDDR4 power requirements.
- Temperature Range Rated for operation from -30°C to 85°C (TC), supporting a range of consumer and industrial ambient conditions.
- Memory Type Volatile DRAM suitable for system memory and temporary data storage roles.
Typical Applications
- Mobile Devices — Provides high-density LPDDR4 memory suitable for mobile memory subsystems that require low-voltage operation and high clock rates.
- Embedded Systems — Used in embedded modules where a 64 Gbit volatile memory is required for temporary data buffering and program execution.
- Memory Subsystems — Fits designs needing a 1G × 64 organization to implement wide data paths in system memory architectures.
Unique Advantages
- High Density: 64 Gbit capacity enables designs to integrate substantial volatile memory without multiple devices.
- Wide Data Organization: 1G × 64 organization supports wider data lanes for simplified memory controller interfacing.
- High Clock Rate: 1.866 GHz operation provides the potential for higher data throughput within LPDDR4-based designs.
- Low-Voltage Operation: 1.1 V supply aligns with mobile LPDDR4 power schemes for improved energy efficiency.
- Extended Temperature Range: Rated from -30°C to 85°C (TC) to accommodate a variety of operating environments.
Why Choose IC DRAM 64GBIT 1.866GHZ?
The MT53D1024M64D8PM-053 WT:D TR positions itself as a high-density LPDDR4 DRAM option that balances sizable memory capacity with low-voltage operation and a 1.866 GHz clock frequency. It is suitable for designers specifying mobile LPDDR4 devices where memory density, wide data organization, and power efficiency are key parameters.
Backed by Micron Technology Inc., this DRAM device is appropriate for system designers and engineers developing memory subsystems and embedded/mobile platforms that require scalable volatile memory and defined operating temperature support.
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