MT53D1024M32D4DT-046 AIT:D TR

IC DRAM 32GBIT 2.133GHZ 200VFBGA
Part Description

IC DRAM 32GBIT 2.133GHZ 200VFBGA

Quantity 92 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package200-VFBGA (10x14.5)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeAutomotive
Clock Frequency2.133 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-40°C ~ 95°C (TC)Write Cycle Time Word PageN/APackaging200-VFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0036

Overview of MT53D1024M32D4DT-046 AIT:D TR – 32 Gbit DRAM, Mobile LPDDR4, 2.133 GHz, 200‑VFBGA

The MT53D1024M32D4DT-046 AIT:D TR is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR4 SDRAM. It delivers high-frequency operation at a clock rate of 2.133 GHz and is supplied at 1.1 V in a compact 200‑VFBGA (10 × 14.5 mm) package.

Targeted for designs that require dense, high-speed memory in temperature-challenging environments, this device is offered by Micron Technology Inc. and carries automotive-grade qualification AEC‑Q100.

Key Features

  • Memory Type & Architecture Mobile LPDDR4 SDRAM organized as 1G × 32 to provide 32 Gbit of volatile DRAM capacity.
  • High-Frequency Operation Supports a clock frequency of 2.133 GHz for high-throughput memory interfaces.
  • Low-Voltage Supply Operates at 1.1 V to support low-power system designs.
  • Automotive Qualification AEC‑Q100 qualification and an automotive grade designation, suitable for automotive system integration where that qualification is required.
  • Wide Operating Temperature Rated for operation from −40 °C to 95 °C (TC), supporting temperature-demanding applications.
  • Compact BGA Package 200‑VFBGA package (10 × 14.5 mm) for space-constrained board designs.

Typical Applications

  • Automotive systems Designed for integration into automotive-grade platforms that require AEC‑Q100‑qualified memory components.
  • Mobile LPDDR4 platforms Suited to designs that use Mobile LPDDR4 SDRAM architectures and require 1G × 32 memory organization.
  • High-frequency memory subsystems Applicable where 2.133 GHz clocking and 1.1 V operation are required to meet bandwidth and power targets.

Unique Advantages

  • Automotive-qualified device: AEC‑Q100 qualification and automotive grade labeling provide traceable suitability for automotive use cases.
  • High bandwidth: 2.133 GHz clock frequency supports demanding data-throughput requirements.
  • High density in compact footprint: 32 Gbit capacity in a 200‑VFBGA (10 × 14.5 mm) package helps reduce board area.
  • Low-voltage operation: 1.1 V supply reduces power draw in voltage-constrained systems.
  • Extended temperature range: −40 °C to 95 °C rating enables deployment in thermally challenging environments.
  • Clear memory organization: 1G × 32 organization simplifies system memory mapping and design planning.

Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?

The MT53D1024M32D4DT-046 AIT:D TR combines Mobile LPDDR4 architecture, high clock frequency, and automotive-grade qualification to deliver a reliable, high-density DRAM option for designs that require both performance and environmental robustness. Its 1.1 V operation and compact 200‑VFBGA footprint make it suitable for space- and power-sensitive implementations.

This device is appropriate for engineers and procurement teams specifying automotive-qualified, high-frequency DRAM or anyone needing a certified Mobile LPDDR4 memory component from Micron Technology Inc. for long-term deployment in temperature-challenging applications.

Request a quote or contact sales to discuss pricing, availability, and technical details for MT53D1024M32D4DT-046 AIT:D TR.

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