MT53D1024M32D4DT-046 AAT:D
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 456 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4DT-046 AAT:D – 32Gbit Mobile LPDDR4 DRAM, 2.133 GHz, 200-VFBGA
The MT53D1024M32D4DT-046 AAT:D is a 32 Gbit volatile DRAM device implemented as mobile LPDDR4 SDRAM. It provides a 1G × 32 memory organization and a high-frequency interface operating at 2.133 GHz.
Targeted for systems requiring high-speed, compact memory, this AEC-Q100 qualified device offers automotive-grade temperature tolerance and low-voltage operation for integration into automotive and mobile embedded applications.
Key Features
- Core / Memory 32 Gbit DRAM organized as 1G × 32 in LPDDR4 SDRAM mobile architecture.
- Performance 2.133 GHz clock frequency for high-rate data transfer consistent with the specified mobile LPDDR4 technology.
- Power 1.1 V supply voltage to support low-voltage system designs.
- Qualification & Grade AEC-Q100 qualification and an automotive grade designation for use in qualified automotive designs.
- Temperature Range Rated for operation from -40 °C to 105 °C (TC), suitable for wide temperature environments.
- Package 200-ball VFBGA package (10 × 14.5 mm) for compact board-level integration.
Typical Applications
- Automotive systems — Automotive-grade LPDDR4 memory for electronic control units and other in-vehicle systems requiring AEC-Q100 qualified components and wide operating temperature.
- Mobile devices — High-speed LPDDR4 memory for mobile platforms where compact package and 2.133 GHz operation support demanding data throughput.
- Embedded systems — Volatile DRAM for embedded applications needing large memory capacity in a small 200-VFBGA footprint.
Unique Advantages
- High-density memory: 32 Gbit capacity provides substantial on-board volatile storage for data-intensive applications.
- High-speed operation: 2.133 GHz clock frequency supports high-throughput memory access patterns.
- Automotive qualification: AEC-Q100 qualification and automotive grade labeling enable use in qualified automotive designs.
- Wide temperature tolerance: -40 °C to 105 °C operating range addresses demanding environmental requirements.
- Low-voltage operation: 1.1 V supply helps reduce system power consumption where applicable.
- Compact package: 200-VFBGA (10 × 14.5 mm) package supports space-constrained PCB layouts.
Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?
The MT53D1024M32D4DT-046 AAT:D positions itself as a high-capacity, high-frequency LPDDR4 memory device tailored for automotive and mobile embedded designs. Its combination of 32 Gbit density, 2.133 GHz operation, and 1.1 V supply supports designs that require both performance and power efficiency.
With AEC-Q100 qualification and a wide -40 °C to 105 °C temperature range, this device is suited to developers and procurement teams building systems that demand automotive-grade reliability, compact packaging, and scalable memory capacity.
Request a quote or submit an inquiry to discuss availability, lead times, and pricing for the MT53D1024M32D4DT-046 AAT:D.
