MT53D1024M32D4DT-046 AIT:D

The MT53D1024M32D4DT-046 AIT:D is a volatile DRAM device based on mobile LPDDR4 SDRAM technology delivering 32 Gbit density in a 1G × 32 organization. It targets systems that require high-bandwidth, low-voltage memory operation with automotive-grade qualification.

Key attributes include a 2.133 GHz clock frequency, 1.1 V supply, AEC-Q100 qualification, and a compact 200‑VFBGA (10 × 14.5 mm) package, offering a balance of performance, power efficiency, and rugged operating range for temperature-critical designs.

Key Features

• Core Technology 
  Mobile LPDDR4 SDRAM architecture optimized for high-speed volatile memory applications.
• Memory Density & Organization 
  32 Gbit total capacity organized as 1G × 32, supporting high-capacity memory requirements.
• High Clock Rate 
  Rated to 2.133 GHz clock frequency to support high-bandwidth memory transactions.
• Low Voltage Operation 
  1.1 V supply voltage for reduced power consumption relative to higher-voltage DRAM options.
• Automotive Qualification & Grade 
  AEC-Q100 qualified and specified as Automotive grade for use in designs requiring that qualification.
• Package 
  200‑VFBGA package (10 × 14.5 mm) for compact board-level integration in space-constrained designs.
• Temperature Range 
  Specified operating temperature from −40 °C to 95 °C (TC) for use across a wide thermal envelope.

Typical Applications

• Automotive systems 
  Memory for automotive-grade electronic control units and infotainment where AEC-Q100 qualification and extended temperature range are required.
• Mobile devices 
  High-bandwidth LPDDR4 memory for mobile platforms that require 32 Gbit capacity and 2.133 GHz operation.
• Embedded computing 
  Compact 200‑VFBGA package and 1.1 V operation suited to space- and power-constrained embedded designs.

Unique Advantages

• High-bandwidth operation: 2.133 GHz clock frequency enables faster memory transactions for bandwidth-sensitive workloads.
• Large memory capacity: 32 Gbit density in a 1G × 32 organisation supports higher memory footprints without multiple devices.
• Automotive qualification: AEC-Q100 qualification and Automotive grade designation provide traceable suitability for automotive design flows.
• Low-voltage efficiency: 1.1 V supply reduces power draw compared with higher-voltage DRAM, beneficial for power-sensitive systems.
• Thermal robustness: −40 °C to 95 °C operating range supports deployment across wide environmental conditions.
• Compact package: 200‑VFBGA (10 × 14.5 mm) package enables high-density PCB integration in compact form factors.

Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?

This LPDDR4 DRAM device combines high clock frequency, large 32 Gbit density, and low-voltage operation within a compact 200‑VFBGA package, positioned for designs that require a balance of bandwidth, capacity, and power efficiency. Its AEC-Q100 qualification and extended temperature rating make it suitable for development flows that require automotive-grade memory components.

Engineers designing mobile, embedded, or automotive systems can leverage the device’s specifications to simplify memory subsystem planning and address space-constrained layouts while maintaining defined thermal and qualification requirements for long-term deployment.

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