MT53D1024M32D4DT-046 AUT:E

The MT53D1024M32D4DT-046 AUT:E is a volatile SDRAM device implemented in Mobile LPDDR4 technology delivering 32 Gbit of memory in a 1G × 32 organization. It provides high-frequency operation at 2.133 GHz with a 1.1 V supply and is offered in a compact 200‑VFBGA package.

Targeted for designs that require high-speed mobile DRAM with automotive-grade reliability, this device combines density, high clock performance, a wide operating temperature range and AEC‑Q100 qualification for environments that demand robust thermal and electrical performance.

Key Features

• Core / Memory 32 Gbit total capacity organized as 1G × 32 using Mobile LPDDR4 SDRAM architecture, suitable for high-density memory requirements.
• Performance Operates at a clock frequency of 2.133 GHz to support high-throughput memory workloads.
• Power Low-voltage operation at 1.1 V to align with modern low-power system rails.
• Package Supplied in a 200‑VFBGA package (10 × 14.5 mm), enabling compact board-level integration.
• Temperature & Qualification Rated for an operating temperature range of −40°C to 125°C and qualified to AEC‑Q100, providing suitability for demanding thermal environments.

Typical Applications

• Automotive systems Automotive-grade qualification (AEC‑Q100) and a wide −40°C to 125°C operating range make this device suitable for in-vehicle memory applications that require reliable operation under harsh temperatures.
• Mobile devices Mobile LPDDR4 technology and 2.133 GHz clocking support high-throughput memory demands in compact, power-sensitive mobile designs.
• Embedded and industrial equipment High density and robust temperature tolerance enable deployment in embedded controllers and industrial platforms where extended thermal range and memory capacity are required.

Unique Advantages

• High-density memory in a compact package: 32 Gbit capacity in a 200‑VFBGA (10 × 14.5 mm) package simplifies board layout while providing substantial memory.
• High-frequency operation: 2.133 GHz clocking enables support for bandwidth-intensive memory tasks.
• Low-voltage operation: 1.1 V supply reduces system power draw and aligns with modern low-power domains.
• Automotive-grade qualification: AEC‑Q100 qualification supports integration into automotive system designs requiring component-level qualification.
• Extended temperature tolerance: −40°C to 125°C rating accommodates demanding thermal environments and broad deployment scenarios.

Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?

The MT53D1024M32D4DT-046 AUT:E positions itself as a high-density, high-frequency Mobile LPDDR4 DRAM option with a compact 200‑VFBGA footprint and low-voltage operation. Its combination of 2.133 GHz performance, 32 Gbit capacity, AEC‑Q100 qualification and wide operating temperature range makes it suitable for designers seeking reliable, high-throughput memory for automotive, mobile and industrial applications.

Choose this device when your design requires scalable memory capacity, thermal robustness and integration into space-constrained boards while maintaining alignment with automotive qualification standards.

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