MT53B1024M32D4NQ-053 WT:C
| Part Description |
IC DRAM 32GBIT 1.866GHZ 200VFBGA |
|---|---|
| Quantity | 479 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B1024M32D4NQ-053 WT:C – IC DRAM 32GBIT 1.866GHZ 200VFBGA
The MT53B1024M32D4NQ-053 WT:C is a 32 Gbit DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides 1G × 32 organization and operates at a clock frequency of 1.866 GHz with a 1.1 V supply.
Packaged in a 200‑VFBGA (10 × 14.5) footprint and specified for operation from -30°C to 85°C, this Micron Technology Inc. memory device targets mobile and embedded applications that require high-frequency LPDDR4 DRAM in a compact form factor.
Key Features
- Memory Type & Format Mobile LPDDR4 SDRAM implemented as DRAM with a 1G × 32 organization, delivering a total memory size of 32 Gbit.
- Performance Rated for operation at a clock frequency of 1.866 GHz for high-rate memory operation.
- Power Low-voltage operation at a 1.1 V supply.
- Package 200‑VFBGA package with a 10 × 14.5 mm footprint for compact board-level integration.
- Temperature Range Operating temperature from -30°C to 85°C (TC).
- Manufacturer Micron Technology Inc.
- Memory Format DRAM — volatile memory intended for system memory applications.
- Mounting Type Listed as Volatile.
Typical Applications
- Mobile devices — Memory subsystem for mobile LPDDR4 designs requiring 1.866 GHz DRAM operation in a compact package.
- Handheld and portable electronics — Provides high-density DRAM in a small 200‑VFBGA footprint suitable for space-constrained boards.
- Embedded systems — Serves embedded applications that specify LPDDR4 memory with 1.1 V supply and the -30°C to 85°C operating range.
Unique Advantages
- High-density 32 Gbit capacity: 1G × 32 organization provides substantial memory capacity within a single device.
- High-frequency operation: 1.866 GHz clock frequency supports designs that require elevated DRAM throughput.
- Low-voltage operation: 1.1 V supply aligns with LPDDR4 system power requirements.
- Compact BGA footprint: 200‑VFBGA (10 × 14.5) package minimizes board area for space-constrained designs.
- Wide ambient range: Rated for -30°C to 85°C operation to accommodate a range of deployment environments.
- Micron manufacturing: Produced by Micron Technology Inc., a known supplier of memory devices.
Why Choose MT53B1024M32D4NQ-053 WT:C?
The MT53B1024M32D4NQ-053 WT:C combines Mobile LPDDR4 SDRAM architecture, 32 Gbit density, and 1.866 GHz operation in a compact 200‑VFBGA package, making it suitable for designs that need high-frequency DRAM in a small footprint. Its 1.1 V supply and specified -30°C to 85°C operating range provide clear, verifiable electrical and environmental parameters for system integration.
This device is appropriate for engineers and procurement teams specifying LPDDR4 memory for mobile and embedded platforms where capacity, frequency, and package size are primary selection criteria, and where component provenance from Micron Technology Inc. is a consideration.
Request a quote or contact sales to discuss availability and pricing for MT53B1024M32D4NQ-053 WT:C.
