MT52L512M64D4PQ-107 WT:B
| Part Description |
IC DRAM 32GBIT 933MHZ 253VFBGA |
|---|---|
| Quantity | 911 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 253-VFBGA (11x11.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 253-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT52L512M64D4PQ-107 WT:B – IC DRAM 32GBIT 933MHZ 253VFBGA
The MT52L512M64D4PQ-107 WT:B is a 32 Gbit volatile DRAM device built on Mobile LPDDR3 SDRAM technology. It provides a 512M × 64 memory organization and a 933 MHz clock frequency in a compact 253-VFBGA (11 × 11.5 mm) package.
This device targets designs that require high-density, mobile-class DRAM with low-voltage operation and a defined industrial operating temperature range, offering a balance of density, performance, and compact package size.
Key Features
- Core Technology Mobile LPDDR3 SDRAM architecture designed for mobile-class DRAM applications.
- Memory Density & Organization 32 Gbit total capacity arranged as 512M × 64 for high-density memory integration.
- Performance 933 MHz clock frequency for timing and throughput characteristics aligned with LPDDR3 operation.
- Power 1.2V supply voltage suitable for low-voltage mobile DRAM designs.
- Package & Mounting 253-VFBGA package (11 × 11.5 mm) for compact PCB footprint and BGA mounting.
- Operating Temperature Specified operating temperature range of −30°C to 85°C (TC) for temperature-sensitive deployments.
Typical Applications
- Mobile LPDDR3 platforms High-density volatile memory for systems implementing Mobile LPDDR3 SDRAM technology.
- Compact embedded designs Used where 32 Gbit capacity and a small 253-VFBGA footprint are required to minimize PCB area.
- Industrial-temperature systems Suitable for systems that require operation across −30°C to 85°C.
Unique Advantages
- High-density 32 Gbit capacity: Enables significant memory integration without increasing component count.
- 512M × 64 organization: Facilitates wide data bus configurations for efficient memory mapping.
- 933 MHz clock frequency: Provides the timing profile expected for Mobile LPDDR3-class memory performance.
- 1.2V low-voltage operation: Supports designs targeting lower power rails common in mobile-class DRAM systems.
- Compact 253-VFBGA package (11 × 11.5 mm): Reduces PCB footprint while supporting BGA mounting for robust board-level integration.
- Extended operating temperature range: −30°C to 85°C rating allows deployment in temperature-variable environments.
Why Choose MT52L512M64D4PQ-107 WT:B?
The MT52L512M64D4PQ-107 WT:B combines Mobile LPDDR3 SDRAM technology with a high 32 Gbit density, a 933 MHz clock frequency, and 1.2V operation in a compact 253-VFBGA package. These characteristics make it well suited to designs that require dense, low-voltage volatile memory in a small footprint and that operate across a defined industrial temperature range.
Manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams specifying high-density LPDDR3 DRAM for mobile-class and space-constrained systems where capacity, package size, and operating temperature are primary selection criteria.
Request a quote or contact sales for pricing and availability of the MT52L512M64D4PQ-107 WT:B.
