MT52L1G64D8QC-107 WT ES:B
| Part Description |
IC DRAM 64GBIT 933MHZ 253VFBGA |
|---|---|
| Quantity | 189 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 253-VFBGA (12x12) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 253-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT52L1G64D8QC-107 WT ES:B – IC DRAM 64GBIT 933MHZ 253VFBGA
The MT52L1G64D8QC-107 WT ES:B is a volatile DRAM device implemented as Mobile LPDDR3 SDRAM. It provides a 64 Gbit memory capacity organized as 1G x 64 with a clock frequency of 933 MHz and a 1.2 V supply.
Designed for LPDDR3-compatible mobile and embedded platforms, this 253-VFBGA packaged device targets applications that require high-density volatile memory, compact package integration, and operation across a -30°C to 85°C temperature range.
Key Features
- Core / Memory Architecture Mobile LPDDR3 SDRAM architecture, organized as 1G x 64 for a total memory size of 64 Gbit.
- Performance 933 MHz clock frequency supporting high-bandwidth memory transfers within LPDDR3 system constraints.
- Power 1.2 V supply voltage consistent with LPDDR3 low-voltage operation.
- Package Supplied in a 253-VFBGA package (12 × 12 mm), enabling compact board-level integration.
- Operating Range Rated for operation from -30°C to 85°C (TC), suitable for a range of commercial and industrial ambient conditions.
Typical Applications
- Mobile devices — Memory for LPDDR3-compatible smartphones, tablets, and handhelds where high-density volatile storage is required.
- Portable electronics — Embedded memory for compact consumer devices that demand low-voltage, high-frequency DRAM.
- Embedded systems — Volatile memory resource for connected and compute modules using LPDDR3 interfaces.
Unique Advantages
- High density memory: 64 Gbit capacity (1G x 64) provides substantial volatile storage in a single device, reducing the number of memory components required.
- Low-voltage operation: 1.2 V supply supports power-efficient designs that must adhere to LPDDR3 power profiles.
- Compact package: 253-VFBGA (12×12) package enables space-saving board layouts for compact devices.
- High clock rate: 933 MHz operation facilitates higher data throughput within LPDDR3-design constraints.
- Wide operating temperature: Rated from -30°C to 85°C, supporting deployments across a broad range of environmental conditions.
Why Choose IC DRAM 64GBIT 933MHZ 253VFBGA?
The MT52L1G64D8QC-107 WT ES:B positions itself as a high-density LPDDR3 memory option that balances capacity, frequency, and low-voltage operation in a compact VFBGA package. Its specification set makes it suitable for designers seeking substantial volatile memory capacity in space-constrained mobile and embedded designs.
This device is well suited to engineers and procurement teams focused on durable, scalable memory solutions where density, LPDDR3 compatibility, and a commercial-to-industrial operating range (-30°C to 85°C) are key decision factors.
If you would like pricing or availability, request a quote or contact sales to submit a purchasing inquiry for the MT52L1G64D8QC-107 WT ES:B.
