MT52L1G32D4PG-093 WT:B

IC DRAM 32GBIT 1067MHZ 178FBGA
Part Description

IC DRAM 32GBIT 1067MHZ 178FBGA

Quantity 281 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package178-FBGA (12x11.5)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR3
Memory Size32 GbitAccess TimeN/AGradeIndustrial
Clock Frequency1.067 GHzVoltage1.2VMemory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)Write Cycle Time Word PageN/APackaging178-VFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of MT52L1G32D4PG-093 WT:B – IC DRAM 32GBIT 1067MHZ 178FBGA

The MT52L1G32D4PG-093 WT:B is a 32 Gbit volatile DRAM implemented as Mobile LPDDR3 SDRAM and organized as 1G × 32. It operates at a clock frequency of 1.067 GHz and a nominal supply voltage of 1.2 V, delivered in a compact 178-ball FBGA package.

This device is intended for designs that require high-density mobile LPDDR3 memory in a space-efficient package, with a specified operating temperature range of −30°C to 85°C (TC).

Key Features

  • Memory Core  Mobile LPDDR3 SDRAM technology, organized as 1G × 32 for a total density of 32 Gbit.
  • Performance  Clock frequency specified at 1.067 GHz to support high-speed DRAM operation within LPDDR3 timing domains.
  • Power  Designed for a 1.2 V supply voltage, consistent with LPDDR3 low-voltage operation.
  • Package  Supplied in a 178-ball VFBGA/FBGA package (178-FBGA, 12 × 11.5 mm footprint) for compact board-level integration.
  • Memory Format & Mounting  Volatile DRAM format suitable for system memory implementations that require LPDDR3 characteristics.
  • Operating Temperature  Specified operating temperature range of −30°C to 85°C (TC) for temperature-constrained embedded and mobile environments.

Typical Applications

  • Mobile and handheld devices  Provides high-density LPDDR3 memory for applications where compact, low-voltage DRAM is required.
  • Embedded systems  Used in space-constrained designs that need a 32 Gbit volatile memory solution with a small FBGA footprint.
  • Memory subsystems  Integrates into memory stacks and modules that specify LPDDR3 operation at 1.067 GHz and 1.2 V supply.

Unique Advantages

  • High density in a small footprint: 32 Gbit capacity in a 178-FBGA package enables compact board layouts without sacrificing memory size.
  • LPDDR3 low-voltage operation: 1.2 V supply supports lower-power memory designs consistent with mobile LPDDR3 requirements.
  • High-speed clock support: 1.067 GHz clock frequency supports fast DRAM access rates within LPDDR3 timing specifications.
  • Wide operating temperature: Rated for −30°C to 85°C (TC), suitable for a range of commercial and industrial temperature environments.
  • Standardized ball-grid package: 178-VFBGA/FBGA package (12 × 11.5 mm) simplifies board-level placement and assembly in compact systems.

Why Choose IC DRAM 32GBIT 1067MHZ 178FBGA?

The MT52L1G32D4PG-093 WT:B is positioned for designs that require a high-density LPDDR3 DRAM solution with defined performance and power characteristics: 32 Gbit density, 1.067 GHz operation, and 1.2 V supply in a compact 178-ball FBGA package. Its specified operating temperature range of −30°C to 85°C and standardized package format make it suitable for space- and power-constrained mobile and embedded systems.

Manufactured by Micron Technology Inc., this device provides a verifiable specification set for engineers specifying mobile LPDDR3 memory where density, low-voltage operation, and package size are primary selection criteria.

Request a quote or submit an inquiry to obtain pricing, availability, and additional ordering information for the MT52L1G32D4PG-093 WT:B.

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