MT52L1G32D4PG-093 WT:B
| Part Description |
IC DRAM 32GBIT 1067MHZ 178FBGA |
|---|---|
| Quantity | 281 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 178-FBGA (12x11.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.067 GHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 178-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT52L1G32D4PG-093 WT:B – IC DRAM 32GBIT 1067MHZ 178FBGA
The MT52L1G32D4PG-093 WT:B is a 32 Gbit volatile DRAM implemented as Mobile LPDDR3 SDRAM and organized as 1G × 32. It operates at a clock frequency of 1.067 GHz and a nominal supply voltage of 1.2 V, delivered in a compact 178-ball FBGA package.
This device is intended for designs that require high-density mobile LPDDR3 memory in a space-efficient package, with a specified operating temperature range of −30°C to 85°C (TC).
Key Features
- Memory Core Mobile LPDDR3 SDRAM technology, organized as 1G × 32 for a total density of 32 Gbit.
- Performance Clock frequency specified at 1.067 GHz to support high-speed DRAM operation within LPDDR3 timing domains.
- Power Designed for a 1.2 V supply voltage, consistent with LPDDR3 low-voltage operation.
- Package Supplied in a 178-ball VFBGA/FBGA package (178-FBGA, 12 × 11.5 mm footprint) for compact board-level integration.
- Memory Format & Mounting Volatile DRAM format suitable for system memory implementations that require LPDDR3 characteristics.
- Operating Temperature Specified operating temperature range of −30°C to 85°C (TC) for temperature-constrained embedded and mobile environments.
Typical Applications
- Mobile and handheld devices Provides high-density LPDDR3 memory for applications where compact, low-voltage DRAM is required.
- Embedded systems Used in space-constrained designs that need a 32 Gbit volatile memory solution with a small FBGA footprint.
- Memory subsystems Integrates into memory stacks and modules that specify LPDDR3 operation at 1.067 GHz and 1.2 V supply.
Unique Advantages
- High density in a small footprint: 32 Gbit capacity in a 178-FBGA package enables compact board layouts without sacrificing memory size.
- LPDDR3 low-voltage operation: 1.2 V supply supports lower-power memory designs consistent with mobile LPDDR3 requirements.
- High-speed clock support: 1.067 GHz clock frequency supports fast DRAM access rates within LPDDR3 timing specifications.
- Wide operating temperature: Rated for −30°C to 85°C (TC), suitable for a range of commercial and industrial temperature environments.
- Standardized ball-grid package: 178-VFBGA/FBGA package (12 × 11.5 mm) simplifies board-level placement and assembly in compact systems.
Why Choose IC DRAM 32GBIT 1067MHZ 178FBGA?
The MT52L1G32D4PG-093 WT:B is positioned for designs that require a high-density LPDDR3 DRAM solution with defined performance and power characteristics: 32 Gbit density, 1.067 GHz operation, and 1.2 V supply in a compact 178-ball FBGA package. Its specified operating temperature range of −30°C to 85°C and standardized package format make it suitable for space- and power-constrained mobile and embedded systems.
Manufactured by Micron Technology Inc., this device provides a verifiable specification set for engineers specifying mobile LPDDR3 memory where density, low-voltage operation, and package size are primary selection criteria.
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