MT48LC8M8A2P-75:G TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 426 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 8 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M8A2P-75:G TR – IC DRAM 64Mbit, 54‑pin TSOP II
The MT48LC8M8A2P-75:G TR is a 64 Mbit volatile SDRAM device from Micron Technology Inc., organized as 8M × 8 with internal bank architecture and a parallel memory interface. It is supplied in a 54‑pin TSOP II package and operates from a single +3.3 V ±0.3 V supply.
Designed for synchronous parallel memory applications, the device supports up to a 133 MHz clock frequency and includes pipelined operation, programmable burst lengths, and standard/low‑power self‑refresh modes to support a range of refresh and access patterns.
Key Features
- Memory Core 64 Mbit SDRAM organized as 8M × 8 (2M × 8 × 4 banks) providing four internal banks for hidden row access and precharge.
- Performance Clock frequency up to 133 MHz with an access time listed at 5.4 ns and a write cycle time (word/page) of 15 ns.
- Interface & Operation Parallel SDRAM with fully synchronous operation; all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
- Timing & Refresh Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh modes, and self‑refresh (standard and low power). 4,096‑cycle refresh with a 64 ms refresh interval.
- Voltage & I/O Single +3.3 V ±0.3 V supply (3.0 V to 3.6 V) with LVTTL‑compatible inputs and outputs.
- Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width) in a compact footprint; commercial operating temperature range 0 °C to +70 °C.
Typical Applications
- Parallel memory subsystems Integration as 64 Mbit parallel SDRAM in systems that require a 54‑pin TSOP II footprint and a single 3.3 V supply.
- Board‑level memory expansion Add or replace DRAM storage where up to 133 MHz clocking and pipelined, synchronous access are required.
- Systems requiring flexible burst/refresh modes Designs that need programmable burst lengths and selectable auto or self‑refresh behavior for varied access patterns and power profiles.
Unique Advantages
- Single‑supply LVTTL I/O: Operates from a single +3.3 V ±0.3 V supply with LVTTL‑compatible signals, simplifying power rail requirements and I/O interfacing.
- PC‑class timing compatibility: Documented PC66/PC100/PC133 compliance and support for 133 MHz clocking provide predictable timing behavior for systems targeting these cycle times.
- Flexible access modes: Programmable burst lengths, auto precharge options and both standard and low‑power self‑refresh offer adaptable performance and refresh strategies.
- Compact TSOP II package: 54‑pin TSOP II (0.400", 10.16 mm width) enables dense board layouts while providing the full set of SDRAM signals.
- Pipelined synchronous operation: Internal pipelined architecture allows column address changes every clock cycle, supporting continuous data flow patterns.
Why Choose IC DRAM 64MBIT PAR 54TSOP II?
The MT48LC8M8A2P-75:G TR delivers a straightforward 64 Mbit parallel SDRAM solution with synchronous, pipelined operation, programmable burst lengths and both auto and self‑refresh capabilities. Its combination of 133 MHz clock support, LVTTL I/O and single‑supply operation makes it suitable for designs requiring compact, parallel DRAM memory in a 54‑pin TSOP II package.
This device is positioned for commercial‑temperature designs that need predictable SDRAM timing and refresh behavior, compact board footprint, and standard 3.3 V system integration. It is a practical option for engineers specifying a 64 Mbit parallel SDRAM with defined timing and refresh features.
Request a quote or contact sales to submit a quotation for MT48LC8M8A2P-75:G TR and to discuss availability and lead times.