MT48LC8M8A2P-75:G TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 426 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 8
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M8A2P-75:G TR – IC DRAM 64Mbit, 54‑pin TSOP II

The MT48LC8M8A2P-75:G TR is a 64 Mbit volatile SDRAM device from Micron Technology Inc., organized as 8M × 8 with internal bank architecture and a parallel memory interface. It is supplied in a 54‑pin TSOP II package and operates from a single +3.3 V ±0.3 V supply.

Designed for synchronous parallel memory applications, the device supports up to a 133 MHz clock frequency and includes pipelined operation, programmable burst lengths, and standard/low‑power self‑refresh modes to support a range of refresh and access patterns.

Key Features

  • Memory Core  64 Mbit SDRAM organized as 8M × 8 (2M × 8 × 4 banks) providing four internal banks for hidden row access and precharge.
  • Performance  Clock frequency up to 133 MHz with an access time listed at 5.4 ns and a write cycle time (word/page) of 15 ns.
  • Interface & Operation  Parallel SDRAM with fully synchronous operation; all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
  • Timing & Refresh  Programmable burst lengths (1, 2, 4, 8, or full page), Auto Precharge (including concurrent auto precharge), Auto Refresh modes, and self‑refresh (standard and low power). 4,096‑cycle refresh with a 64 ms refresh interval.
  • Voltage & I/O  Single +3.3 V ±0.3 V supply (3.0 V to 3.6 V) with LVTTL‑compatible inputs and outputs.
  • Package & Temperature  54‑pin TSOP II (0.400", 10.16 mm width) in a compact footprint; commercial operating temperature range 0 °C to +70 °C.

Typical Applications

  • Parallel memory subsystems  Integration as 64 Mbit parallel SDRAM in systems that require a 54‑pin TSOP II footprint and a single 3.3 V supply.
  • Board‑level memory expansion  Add or replace DRAM storage where up to 133 MHz clocking and pipelined, synchronous access are required.
  • Systems requiring flexible burst/refresh modes  Designs that need programmable burst lengths and selectable auto or self‑refresh behavior for varied access patterns and power profiles.

Unique Advantages

  • Single‑supply LVTTL I/O: Operates from a single +3.3 V ±0.3 V supply with LVTTL‑compatible signals, simplifying power rail requirements and I/O interfacing.
  • PC‑class timing compatibility: Documented PC66/PC100/PC133 compliance and support for 133 MHz clocking provide predictable timing behavior for systems targeting these cycle times.
  • Flexible access modes: Programmable burst lengths, auto precharge options and both standard and low‑power self‑refresh offer adaptable performance and refresh strategies.
  • Compact TSOP II package: 54‑pin TSOP II (0.400", 10.16 mm width) enables dense board layouts while providing the full set of SDRAM signals.
  • Pipelined synchronous operation: Internal pipelined architecture allows column address changes every clock cycle, supporting continuous data flow patterns.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC8M8A2P-75:G TR delivers a straightforward 64 Mbit parallel SDRAM solution with synchronous, pipelined operation, programmable burst lengths and both auto and self‑refresh capabilities. Its combination of 133 MHz clock support, LVTTL I/O and single‑supply operation makes it suitable for designs requiring compact, parallel DRAM memory in a 54‑pin TSOP II package.

This device is positioned for commercial‑temperature designs that need predictable SDRAM timing and refresh behavior, compact board footprint, and standard 3.3 V system integration. It is a practical option for engineers specifying a 64 Mbit parallel SDRAM with defined timing and refresh features.

Request a quote or contact sales to submit a quotation for MT48LC8M8A2P-75:G TR and to discuss availability and lead times.

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