MT48LC8M8A2P-6A:J TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 84 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M8A2P-6A:J TR – IC DRAM 64MBIT PAR 54TSOP II

The MT48LC8M8A2P-6A:J TR is a 64 Mbit volatile DRAM device implemented in SDRAM architecture and organized as 8M × 8. It provides parallel memory interfacing in a compact 54‑TSOP II package for systems requiring synchronous dynamic RAM.

Designed for applications that need moderate-capacity synchronous memory, the device offers defined timing characteristics (167 MHz clock, 5.4 ns access) and operates from a 3.0 V to 3.6 V supply across a 0 °C to 70 °C ambient range.

Key Features

  • Memory Core  Volatile SDRAM technology organized as 8M × 8 for a total memory size of 64 Mbit.
  • Interface  Parallel memory interface suitable for synchronous parallel bus architectures.
  • Performance  Rated for a 167 MHz clock with a typical access time of 5.4 ns and a write cycle time (word/page) of 12 ns.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Package  54‑TSOP (0.400", 10.16 mm width) — supplied in the 54‑TSOP II package case.
  • Operating Conditions  Ambient operating temperature range of 0 °C to 70 °C (TA).

Typical Applications

  • Embedded memory expansion  Adds 64 Mbit of synchronous parallel DRAM for microcontroller- or FPGA-based systems requiring external SDRAM.
  • Consumer and commercial electronics  Provides synchronous DRAM storage for devices operating within a 0 °C to 70 °C ambient range.
  • Legacy parallel-bus systems  Supplies parallel SDRAM capacity for designs that use established parallel memory interfaces.

Unique Advantages

  • Deterministic timing:  167 MHz clock rating with 5.4 ns access time and 12 ns write cycle time support predictable memory performance.
  • Standard voltage range:  3.0 V to 3.6 V supply compatibility simplifies integration with common 3 V system rails.
  • Compact footprint:  54‑TSOP II package (0.400", 10.16 mm width) enables denser board layouts where board space is constrained.
  • Parallel interface:  Direct parallel memory interface for systems that require synchronous bus connections rather than serial memories.
  • Manufacturer-backed device:  Produced by Micron Technology Inc., providing a known source for SDRAM components.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC8M8A2P-6A:J TR positions itself as a straightforward, mid-density SDRAM option for designs that need 64 Mbit of parallel synchronous memory in a compact TSOP II package. Its specified clock, access time, and write cycle metrics allow engineers to plan timing budgets and memory performance with clarity.

This device is suited to designers targeting systems with parallel memory buses, requiring a standard 3.0 V–3.6 V supply and operation within a 0 °C to 70 °C ambient range. Its combination of performance parameters and package size supports integration into space-conscious boards while providing predictable SDRAM behavior.

Request a quote or submit a pricing and availability inquiry to receive lead-time and order information for the MT48LC8M8A2P-6A:J TR.

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