MT52L1G32D4PG-107 WT:B
| Part Description |
IC DRAM 32GBIT 933MHZ 178FBGA |
|---|---|
| Quantity | 611 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 178-FBGA (12x11.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.2V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 178-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT52L1G32D4PG-107 WT:B – IC DRAM 32GBIT 933MHZ 178FBGA
The MT52L1G32D4PG-107 WT:B is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR3 SDRAM technology. It is organized as 1G × 32, operates at a clock frequency of 933 MHz and is specified for 1.2 V supply operation. The device is supplied in a 178-ball VFBGA package and is specified for an operating temperature range of −30°C to 85°C (TC).
Key Features
- Memory Type and Technology Mobile LPDDR3 SDRAM volatile memory, providing the LPDDR3 architecture for devices and systems that require this memory class.
- Density and Organization 32 Gbit capacity organized as 1G × 32, enabling high-density DRAM implementations within a single device.
- Clock Frequency Rated for 933 MHz operation, supporting timing requirements associated with that clock frequency.
- Voltage Supply Single supply voltage of 1.2 V as specified for device operation.
- Package 178-ball VFBGA (supplier package listed as 178-FBGA, 12 × 11.5 mm body) for compact board-level integration.
- Temperature Range Specified operating temperature range of −30°C to 85°C (TC).
Typical Applications
- Mobile LPDDR3 memory subsystems Used where Mobile LPDDR3 SDRAM is required at 32 Gbit density and 933 MHz operation.
- High-density DRAM designs Integrated into designs that require a single-device 32 Gbit DRAM organized as 1G × 32.
- Compact package implementations Suited for board-level implementations that leverage a 178-ball VFBGA (12 × 11.5 mm) package footprint.
Unique Advantages
- High density in a single device: 32 Gbit capacity (1G × 32) reduces the number of devices required to achieve large memory footprints.
- LPDDR3 technology at 933 MHz: Provides specified operation at 933 MHz within the Mobile LPDDR3 class.
- Low-voltage operation (1.2 V): Single 1.2 V supply specification supports designs targeting LPDDR3 power rails.
- Compact VFBGA package: 178-ball VFBGA (supplier package: 178-FBGA, 12 × 11.5 mm) enables dense PCB layouts.
- Designed for extended temperature range: Specified operating range of −30°C to 85°C (TC) for temperature-conditioned applications.
- Micron-manufactured device: Supplied by Micron Technology Inc., with the device part number MT52L1G32D4PG-107 WT:B.
Why Choose MT52L1G32D4PG-107 WT:B?
The MT52L1G32D4PG-107 WT:B positions as a high-density Mobile LPDDR3 DRAM option delivering 32 Gbit capacity in a single 1G × 32 device. Its 933 MHz clock rating, 1.2 V supply and compact 178-ball VFBGA package make it suitable for designs that require LPDDR3-class memory density and a defined operating temperature range.
Engineers specifying the MT52L1G32D4PG-107 WT:B can rely on the explicit device specifications—capacity, organization, clock frequency, supply voltage, package geometry and temperature rating—when evaluating system integration and layout constraints. The part is manufactured by Micron Technology Inc.
Request a quote or contact sales for pricing, lead times and availability for MT52L1G32D4PG-107 WT:B.
