MT48LC8M32B2P-7 TR

The MT48LC8M32B2P-7 TR is a 256 Mbit synchronous DRAM organized as 8M × 32 with a parallel memory interface. It is a fully synchronous SDRAM device designed for systems requiring PC100 functionality and standard +3.3 V operation.

Key attributes include a 143 MHz clock rate (speed grade -7), 6.0 ns access time at CAS latency = 3, programmable burst lengths, and an 86-pin TSOP II (400 mil / 10.16 mm width) package for surface-mount applications. The device operates over a commercial temperature range of 0°C to +70°C and supports JEDEC-style refresh and power management modes documented in the datasheet.

Key Features

• Core / Architecture 8M × 32 organization (2 Meg × 32 × 4 banks) with internal banks to hide row access and precharge latency.
• Synchronous SDRAM Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Performance / Timing Speed grade -7: 143 MHz clock frequency and 6.0 ns access time (CAS latency = 3). Supports CAS latencies of 1, 2, and 3 and programmable burst lengths of 1, 2, 4, 8, or full page.
• Refresh & Power Modes Auto Refresh (4,096-cycle refresh / 64 ms), Self Refresh mode, Auto Precharge and Concurrent Auto Precharge options for standard SDRAM refresh and power-management sequences.
• Interface / I/O Parallel memory interface with LVTTL-compatible inputs and outputs; supports PC100 functionality.
• Power Single-supply operation at +3.3 V ±0.3 V (3.0 V to 3.6 V).
• Package 86-pin TSOP II (400 mil / 10.16 mm width) surface-mount package suitable for high-density PCB assembly.
• Operating Range Commercial temperature range: 0°C to +70°C (TA).
• Write Cycle Write cycle time (word/page): 14 ns as specified in the device data.

Typical Applications

• Parallel SDRAM Memory Subsystem — Provides 256 Mbit of synchronous parallel DRAM storage for systems requiring PC100-compatible memory and standard +3.3 V operation.
• Buffered/High-throughput Data Buffers — 8M × 32 organization with internal pipelining and programmable burst lengths for burst-oriented read/write operations.
• Systems Requiring Standard SDRAM Control — Supports standard SDRAM commands (AUTO REFRESH, SELF REFRESH, AUTO PRECHARGE) and CAS latency settings for conventional memory controller implementations.

Unique Advantages

• Defined speed grade (-7) and timing: 143 MHz clock and 6.0 ns access time provide a clear performance profile for system timing closure.
• Flexible burst and latency options: Programmable burst lengths and CAS latency settings (1, 2, 3) let designers tune throughput and latency for target workloads.
• Integrated bank architecture: Four internal banks enable overlapping row activation and precharge to improve effective access efficiency.
• Standard +3.3 V single-supply operation: Simplifies power-rail design by operating across 3.0 V to 3.6 V tolerances.
• Comprehensive refresh and power modes: Auto Refresh, Self Refresh, and Auto Precharge features support standard SDRAM refresh management and power control.
• Surface-mount TSOP II package: 86-pin TSOP (400 mil / 10.16 mm) provides a compact footprint for high-density PCB layouts.

Why Choose MT48LC8M32B2P-7 TR?

The MT48LC8M32B2P-7 TR is positioned for designs requiring a documented PC100-compatible synchronous parallel memory device with a defined 143 MHz / 6 ns (-7) timing specification. Its 8M × 32 organization, internal banking, and programmable burst/latency options make it suitable for systems that implement conventional SDRAM control and require predictable timing for memory subsystems.

With single-supply +3.3 V operation and an 86-pin TSOP II surface-mount package, the device fits into standard PCB power and mechanical designs while providing refresh and power-management modes necessary for sustained operation and low-power standby scenarios documented in the datasheet.

Request a quote or contact sales to obtain pricing, lead-time, or sample information for the MT48LC8M32B2P-7 TR.