MT48LC8M32B2F5-7 TR

IC DRAM 256MBIT PAR 90VFBGA
Part Description

IC DRAM 256MBIT PAR 90VFBGA

Quantity 523 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-VFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time6 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging90-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC8M32B2F5-7 TR – IC DRAM 256MBIT PAR 90VFBGA

The MT48LC8M32B2F5-7 TR is a 256 Mbit synchronous DRAM arranged as 8M × 32 with four internal banks, supplied in a 90-ball VFBGA (8 mm × 13 mm) package. It implements fully synchronous, pipelined SDRAM functionality with a parallel memory interface suitable for commercial-temperature systems.

Designed for applications requiring a 256 Mbit parallel SDRAM solution, this device delivers PC100 functionality, programmable burst lengths, and standard SDRAM command features (auto/precharge, auto-refresh, self-refresh) while operating from a single +3.3 V ±0.3 V supply.

Key Features

  • Memory Core  256 Mbit SDRAM organized as 8M × 32 with 4 internal banks (2 Meg × 32 × 4 banks) for concurrent bank operation and improved access handling.
  • Synchronous, Pipelined Operation  Fully synchronous design with registered inputs on the positive clock edge and internal pipelined operation that allows column addresses to change every clock cycle.
  • Performance and Timing  Speed grade -7 supports a clock frequency up to 143 MHz with an access time of 6.0 ns (CL = 3); supports CAS latencies of 1, 2 and 3.
  • Burst and Command Flexibility  Programmable burst lengths (1, 2, 4, 8, or full page) plus Auto Precharge, Concurrent Auto Precharge, Auto Refresh and Self Refresh modes.
  • Interface and I/O  Parallel memory interface with LVTTL-compatible inputs and outputs for standard system integration.
  • Power  Single +3.3 V ±0.3 V supply range (3.0 V to 3.6 V) to match common system rails.
  • Package and Temperature  90-ball VFBGA package (8 mm × 13 mm footprint) with a commercial operating temperature range of 0°C to +70°C.
  • Refresh and Reliability  Supports a 64 ms, 4,096-cycle refresh (15.6 μs/row) and standard SDRAM refresh commands for data retention and reliability.
  • Write Cycle  Write cycle time (word page) specified at 14 ns for write timing planning.

Typical Applications

  • Commercial embedded systems  Board-level memory expansion where a 256 Mbit parallel SDRAM is required for volatile data storage in commercial-temperature designs.
  • PC100-compatible systems  Systems requiring PC100 functionality and standard SDRAM timing characteristics.
  • Consumer electronics  Devices needing parallel SDRAM buffering and burst-read/write capability with programmable burst lengths and standard SDRAM command support.

Unique Advantages

  • Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, full page) allow tuning of sequential transfer behavior to match system access patterns.
  • Banked architecture for hidden latency: Four internal banks enable row access/precharge hiding to improve effective throughput for interleaved accesses.
  • Standard 3.3 V power rail: Single +3.3 V ±0.3 V supply simplifies integration into systems with common 3.3 V rails.
  • Commercial temperature rating: Specified for 0°C to +70°C operation to match typical commercial electronic applications.
  • Compact FBGA footprint: 90-ball VFBGA (8 mm × 13 mm) package provides a compact board-level memory option for dense layouts.
  • Synchronous LVTTL I/O: LVTTL-compatible inputs and outputs and fully synchronous operation simplify timing design and clocked interfacing.

Why Choose IC DRAM 256MBIT PAR 90VFBGA?

The MT48LC8M32B2F5-7 TR (IC DRAM 256MBIT PAR 90VFBGA) positions itself as a practical, standards-based 256 Mbit SDRAM option for commercial systems that require a parallel synchronous memory with programmable burst modes, internal bank architecture and PC100 functionality. Its combination of 8M × 32 organization, 4 banks, and standard SDRAM command set supports common memory subsystem designs.

This device is suited to engineers and procurement teams specifying board-level SDRAM for commercial embedded and legacy systems where predictable timing (6 ns access, 143 MHz clock grade), single 3.3 V supply operation, and a compact 90-ball VFBGA package are required. The product’s standard SDRAM features and documented timing make it straightforward to validate and integrate into existing memory controllers that support parallel SDRAM interfaces.

Request a quote or submit a procurement inquiry to receive pricing, lead-time and technical information for the MT48LC8M32B2F5-7 TR.

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