MT48LC8M32B2F5-6 TR

The MT48LC8M32B2F5-6 TR is a 256 Mbit ×32 synchronous DRAM (SDRAM) device from Micron Technology featuring a parallel interface and a 90-ball VFBGA package. It implements a 2M ×32 ×4-bank architecture with PC100 functionality and operates from a single +3.3 V ±0.3 V supply.

This device targets systems that require fully synchronous parallel DRAM operation at a 166 MHz clock rate (–6 speed grade) with support for programmable burst lengths, internal pipelining and bank-based row management for predictable memory access behavior.

Key Features

• Core / Organization 8M × 32 memory organization (2M ×32 ×4 banks) providing 256 Mbit total density and internal banks for row access and precharge management.
• Synchronous Operation Fully synchronous SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Performance 166 MHz clock frequency (–6 speed grade) with an access time of 5.5 ns and write cycle time (word/page) of 12 ns.
• Burst and Latency Options Programmable burst lengths of 1, 2, 4, 8 or full page and support for CAS latency settings of 1, 2 and 3.
• Refresh and Power Management Auto Refresh and Self Refresh modes with a 64 ms, 4,096-cycle refresh (15.6 μs/row) and support for Auto Precharge and Concurrent Auto Precharge commands.
• I/O and Voltage LVTTL-compatible inputs/outputs and single +3.3 V ±0.3 V supply (operating range 3.0 V to 3.6 V specified).
• Package 90-ball VFBGA package (8 mm × 13 mm, listed as 90-VFBGA / 90-ball FBGA F5 option) suitable for compact board layouts.
• Operating Range Commercial temperature operating range: 0°C to +70°C (TA).

Typical Applications

• PC100 Memory Subsystems Designed with PC100 functionality for systems and subsystems requiring PC100-compliant synchronous DRAM behavior.
• Parallel-Interface Memory Designs Suited to designs that require a parallel SDRAM interface and predictable burst/read/write timing control.
• Space-Constrained Board Layouts The 90-ball VFBGA (8 mm × 13 mm) package supports compact PCB implementations where ball-grid packaging is preferred.

Unique Advantages

• Synchronous, pipelined architecture: Enables column address changes every clock cycle and predictable timing for pipelined memory access.
• Flexible burst and latency configuration: Programmable burst lengths and CAS latency options accommodate varied access patterns and timing requirements.
• Banked memory organization: Four internal banks help hide row access and precharge, improving effective throughput for interleaved accesses.
• Standard +3.3 V supply and LVTTL I/O: Simplifies integration with systems using industry-standard signaling and power rails.
• On-chip refresh and power modes: Auto Refresh, Self Refresh, and Auto Precharge features reduce external control complexity for refresh and power management.
• Compact FBGA package: 90-ball VFBGA (8×13 mm) reduces PCB footprint compared with larger through-hole or TSOP options.

Why Choose MT48LC8M32B2F5-6 TR?

The MT48LC8M32B2F5-6 TR provides a synchronous, banked 256 Mbit SDRAM solution with PC100 functionality and flexible burst/latency control, suited to designs that require a parallel SDRAM interface at 166 MHz. Its combination of internal pipelining, on-chip refresh modes and LVTTL I/O simplifies timing control and integration on systems powered by a +3.3 V supply.

This device is appropriate for designers and procurement teams specifying commercial-temperature SDRAM in a compact 90-ball VFBGA package where predictable synchronous performance and standard voltage/I/O compatibility are required.

Request a quote or submit an RFQ to obtain pricing and availability for the MT48LC8M32B2F5-6 TR.