MT48LC8M32B2P-6 TR

The MT48LC8M32B2P-6 TR is a 256 Mbit synchronous DRAM organized as 8M × 32 with four internal banks. It provides a parallel SDRAM interface with PC100 functionality and is optimized for systems that require synchronous, pipelined memory operation at up to 166 MHz clock frequency.

Designed for applications requiring standard SDRAM features—programmable burst lengths, selectable CAS latencies, auto-refresh and self-refresh modes—this device offers 3.3 V single-supply operation and a compact 86-pin TSOP II package (0.400" / 10.16 mm width).

Key Features

• Core / Architecture  8M × 32 organization (2M × 32 × 4 banks) with internal bank architecture for overlapping row access and precharge operations.
• SDRAM Functionality  Fully synchronous operation with internal pipelining; column address can change every clock cycle and the device supports PC100 functionality.
• Burst and Mode Control  Programmable burst lengths of 1, 2, 4, 8, or full page; supports Auto Precharge, Concurrent Auto Precharge, Auto Refresh and Self Refresh modes.
• Timing  -6 speed grade: 166 MHz clock frequency with 5.5 ns access time (CAS latency up to 3 supported); write cycle time (word page) 12 ns.
• Voltage and I/O  Single +3.3 V supply (±0.3 V) with LVTTL-compatible inputs and outputs.
• Refresh  4,096-cycle refresh (64 ms refresh interval, 15.6 μs/row) per datasheet refresh specification.
• Package and Temperature  86-pin TSOP II (400 mil / 10.16 mm width) package; commercial operating temperature 0 °C to +70 °C (TA).

Typical Applications

• PC100-compliant memory subsystems  Use where PC100 SDRAM functionality and synchronous, pipelined accesses at up to 166 MHz are required.
• Parallel SDRAM-based designs  Systems that require a 32-bit parallel SDRAM interface with programmable burst and CAS latency options.
• Embedded and industrial commercial equipment  Devices needing 256 Mbit volatile storage in an 86-pin TSOP II package with standard commercial temperature range.

Unique Advantages

• PC100 functionality: Ensures operation compatible with PC100 timing at the -6 speed grade (166 MHz).
• Flexible latency and burst control: CAS latency options (1, 2, 3) and multiple burst length settings allow tuning for system timing and throughput.
• Single 3.3 V supply: Simplifies power-rail design with a single +3.3 V ±0.3 V supply requirement.
• Internal bank architecture: Four internal banks help hide row access and precharge latencies for improved effective throughput.
• Compact TSOP II packaging: 86-pin TSOP II (400 mil / 10.16 mm) provides a small footprint for board-level memory implementations.
• Refresh and low-power modes: Auto Refresh and Self Refresh modes support standard SDRAM refresh management and power sequencing.

Why Choose MT48LC8M32B2P-6 TR?

The MT48LC8M32B2P-6 TR delivers a standards-based 256 Mbit SDRAM solution from Micron with PC100-capable timing, flexible burst and CAS options, and a compact 86-pin TSOP II package. It is well suited to designs that need a parallel SDRAM interface, predictable timing (166 MHz / 5.5 ns access time at -6), and standard commercial temperature operation.

For engineers specifying parallel SDRAM memory, this device provides a verifiable set of timing, refresh and interface features from a recognized memory manufacturer, making it appropriate for systems where synchronous, pipelined memory behavior and standard SDRAM modes are required.

Request a quote or submit an inquiry for MT48LC8M32B2P-6 TR to obtain pricing, availability and lead-time information.