MT48LC8M16A2P-7E:G TR

The MT48LC8M16A2P-7E:G TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with four internal banks and a parallel memory interface. It implements fully synchronous, pipelined SDR SDRAM architecture and targets systems requiring 128 Mbit of volatile parallel DRAM in a 54-pin TSOP II package.

Key operational parameters include a 133 MHz clock frequency, 3.0 V–3.6 V supply range, commercial operating temperature of 0 °C to 70 °C, and fast timing characteristics suitable for PC100/PC133-class designs and similar parallel SDRAM applications.

Key Features

• Memory Architecture  128 Mbit SDRAM organized as 8M × 16 with four internal banks for improved row/column management and concurrent operations.
• SDR SDRAM Core  Fully synchronous operation with registered signals on the positive clock edge and internal pipelined operation allowing column address changes every clock cycle.
• Performance & Timing  PC100- and PC133-compliant timing options with a 133 MHz clock frequency, specified access time of 5.4 ns, and a write cycle/word page time of 14 ns.
• Programmable Burst & Refresh  Programmable burst lengths (1, 2, 4, 8, or full page) plus auto precharge and auto refresh modes; supports standard self-refresh modes.
• Power & I/O  Single-supply operation in the 3.0 V–3.6 V range and LVTTL-compatible inputs and outputs for interface compatibility with common 3.3 V logic.
• Package & Temperature  54-pin TSOP II (0.400", 10.16 mm width) plastic package with a commercial operating temperature range of 0 °C to +70 °C.

Typical Applications

• PC100/PC133 memory modules  Suitable for use in designs and systems targeting PC100/PC133 compliant SDRAM timing.
• Embedded systems with parallel SDRAM  Provides 128 Mbit volatile storage for embedded platforms requiring a parallel SDRAM interface in a compact TSOP II package.
• Commercial electronic equipment  Fits applications operating in the commercial temperature range (0 °C to 70 °C) that require synchronous DRAM buffering or main memory.

Unique Advantages

• PC100/PC133 timing compatibility: Enables integration into systems designed around PC100 and PC133 SDRAM timing standards.
• Flexible data transfer options: Programmable burst lengths and pipelined operation allow designers to optimize throughput for varied access patterns.
• Compact TSOP II packaging: 54-pin, 0.400" (10.16 mm) width package reduces board footprint while providing standard parallel DRAM pinout.
• Single 3.3 V supply: Operates from a 3.0 V–3.6 V supply range, simplifying power design for 3.3 V systems.
• Internal bank architecture: Four internal banks and internal precharge/refresh features help hide row access times and improve effective memory throughput.
• Commercial temperature rating: Specified for 0 °C to +70 °C operation for stable performance in commercial-grade applications.

Why Choose MT48LC8M16A2P-7E:G TR?

The MT48LC8M16A2P-7E:G TR delivers a straightforward, verified 128 Mbit SDRAM solution with PC100/PC133 timing compatibility, flexible burst modes, and a compact 54-pin TSOP II footprint. Its combination of synchronous pipelined operation, internal bank architecture, and LVTTL-compatible I/O makes it appropriate for designs that require predictable parallel SDRAM behavior and compact board integration.

This device is well suited to engineers and procurement teams sourcing commercial-temperature parallel SDRAM for legacy and contemporary systems that operate from a 3.0 V–3.6 V supply and require 128 Mbit volatile storage with standard SDRAM control and refresh features.

Request a quote or submit an inquiry for availability and pricing for MT48LC8M16A2P-7E:G TR to evaluate this SDRAM device for your next design.