MT48LC8M16A2P-75:G
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 159 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2P-75:G – IC DRAM 128MBIT PAR 54TSOP II
The MT48LC8M16A2P-75:G is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous operation with internal pipelined architecture and multiple internal banks to support high-throughput, burst-oriented memory access.
Designed for commercial PC100/PC133-compliant systems and board-level memory applications, this device delivers 133 MHz clock operation, flexible burst controls and standard refresh/self-refresh modes to meet the timing and capacity needs of synchronous-memory designs.
Key Features
- Core / Memory Architecture 128 Mbit SDRAM organized as 8M × 16 with 4 internal banks (2 Meg × 16 × 4 banks as listed in the datasheet).
- Synchronous SDRAM Operation Fully synchronous; all inputs registered on the positive edge of the system clock with internal pipelined operation and column address changes allowed every clock cycle.
- Performance & Timing PC100- and PC133-compliant timing with a clock frequency of 133 MHz and documented timing options for -75 speed grade; access time listed as 5.4 ns and write cycle time (word/page) of 15 ns in the product specifications.
- Burst and Refresh Functions Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge modes, auto refresh and self-refresh (standard and low power options noted in the datasheet where applicable).
- Voltage & I/O Single-supply operation at 3.0 V to 3.6 V with LVTTL-compatible inputs and outputs documented in the datasheet.
- Package & Temperature Supplied in a 54-pin TSOP II (400 mil, 10.16 mm width) package and specified for commercial operating temperature 0°C to +70°C (TA).
- Options & Marking Part of Micron’s 128Mb SDRAM family with revision and timing options; the -75 speed grade and Revision :G are indicated for this part number in the datasheet extracts.
Typical Applications
- PC100 / PC133 systems Use as synchronous DRAM memory in systems requiring PC100/PC133-compliant SDRAM timing and behavior.
- Board-level memory modules Suitable for designs requiring a 54-pin TSOP II footprint and a parallel SDRAM interface for on-board memory expansion.
- Commercial electronic systems Intended for commercial-temperature (0°C to +70°C) applications that need 128 Mbit of parallel SDRAM capacity and standard refresh/self-refresh support.
Unique Advantages
- Synchronous, pipelined architecture: Internal pipelining and registered inputs allow column addresses to change every clock cycle, aiding high-throughput burst transfers.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning of transfer granularity to match system access patterns.
- Standardized timing support: PC100/PC133 compliance with documented -75 timing option simplifies integration into compliant systems.
- Single 3.0–3.6 V supply: A single supply rail (3.0 V to 3.6 V) simplifies power-rail design for systems using 3.3 V logic levels.
- Compact TSOP II package: 54-pin TSOP II (0.400", 10.16 mm width) package supports board-level density requirements while providing a standard mounting footprint.
- Refresh and self-refresh modes: Auto refresh and self-refresh options (including low power variants noted in the datasheet) help maintain data integrity and support power management scenarios.
Why Choose MT48LC8M16A2P-75:G?
The MT48LC8M16A2P-75:G offers a documented, PC100/PC133-capable SDRAM solution with 128 Mbit capacity, 8M × 16 organization, and a 54-pin TSOP II footprint for straightforward board-level integration. Its synchronous, pipelined design with internal banks and programmable burst control provides the timing flexibility required for burst-oriented memory subsystems.
With a single 3.0–3.6 V supply, standard LVTTL I/O compatibility and commercial temperature rating, this device is suited to commercial electronic designs that require a compact, parallel SDRAM IC backed by Micron’s published datasheet and part-option definitions.
If you require pricing, availability, or a formal quote for MT48LC8M16A2P-75:G, request a quote or contact sales to discuss your requirements and lead times.