MT48LC8M16A2P-75:G

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 159 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC8M16A2P-75:G – IC DRAM 128MBIT PAR 54TSOP II

The MT48LC8M16A2P-75:G is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous operation with internal pipelined architecture and multiple internal banks to support high-throughput, burst-oriented memory access.

Designed for commercial PC100/PC133-compliant systems and board-level memory applications, this device delivers 133 MHz clock operation, flexible burst controls and standard refresh/self-refresh modes to meet the timing and capacity needs of synchronous-memory designs.

Key Features

  • Core / Memory Architecture 128 Mbit SDRAM organized as 8M × 16 with 4 internal banks (2 Meg × 16 × 4 banks as listed in the datasheet).
  • Synchronous SDRAM Operation Fully synchronous; all inputs registered on the positive edge of the system clock with internal pipelined operation and column address changes allowed every clock cycle.
  • Performance & Timing PC100- and PC133-compliant timing with a clock frequency of 133 MHz and documented timing options for -75 speed grade; access time listed as 5.4 ns and write cycle time (word/page) of 15 ns in the product specifications.
  • Burst and Refresh Functions Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge modes, auto refresh and self-refresh (standard and low power options noted in the datasheet where applicable).
  • Voltage & I/O Single-supply operation at 3.0 V to 3.6 V with LVTTL-compatible inputs and outputs documented in the datasheet.
  • Package & Temperature Supplied in a 54-pin TSOP II (400 mil, 10.16 mm width) package and specified for commercial operating temperature 0°C to +70°C (TA).
  • Options & Marking Part of Micron’s 128Mb SDRAM family with revision and timing options; the -75 speed grade and Revision :G are indicated for this part number in the datasheet extracts.

Typical Applications

  • PC100 / PC133 systems Use as synchronous DRAM memory in systems requiring PC100/PC133-compliant SDRAM timing and behavior.
  • Board-level memory modules Suitable for designs requiring a 54-pin TSOP II footprint and a parallel SDRAM interface for on-board memory expansion.
  • Commercial electronic systems Intended for commercial-temperature (0°C to +70°C) applications that need 128 Mbit of parallel SDRAM capacity and standard refresh/self-refresh support.

Unique Advantages

  • Synchronous, pipelined architecture: Internal pipelining and registered inputs allow column addresses to change every clock cycle, aiding high-throughput burst transfers.
  • Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning of transfer granularity to match system access patterns.
  • Standardized timing support: PC100/PC133 compliance with documented -75 timing option simplifies integration into compliant systems.
  • Single 3.0–3.6 V supply: A single supply rail (3.0 V to 3.6 V) simplifies power-rail design for systems using 3.3 V logic levels.
  • Compact TSOP II package: 54-pin TSOP II (0.400", 10.16 mm width) package supports board-level density requirements while providing a standard mounting footprint.
  • Refresh and self-refresh modes: Auto refresh and self-refresh options (including low power variants noted in the datasheet) help maintain data integrity and support power management scenarios.

Why Choose MT48LC8M16A2P-75:G?

The MT48LC8M16A2P-75:G offers a documented, PC100/PC133-capable SDRAM solution with 128 Mbit capacity, 8M × 16 organization, and a 54-pin TSOP II footprint for straightforward board-level integration. Its synchronous, pipelined design with internal banks and programmable burst control provides the timing flexibility required for burst-oriented memory subsystems.

With a single 3.0–3.6 V supply, standard LVTTL I/O compatibility and commercial temperature rating, this device is suited to commercial electronic designs that require a compact, parallel SDRAM IC backed by Micron’s published datasheet and part-option definitions.

If you require pricing, availability, or a formal quote for MT48LC8M16A2P-75:G, request a quote or contact sales to discuss your requirements and lead times.

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